GaAs light-emitting diodes with n-i-p-i active layers fabricated by selective contact diffusion

Ackley, D. E.; Mantz, J.; Lee, H.; Nouri, N.; Shieh, C.-L.
July 1988
Applied Physics Letters;7/11/1988, Vol. 53 Issue 2, p125
Academic Journal
GaAs/AlGaAs light-emitting diodes (LED’s) with nipi active regions have been successfully fabricated using sequential n and p diffusions to selectively contact the doping superlattice. By doing sequential patterned sulfur and zinc diffusions, a lateral injection LED can be readily fabricated. Excellent current-voltage characteristics were achieved with reverse breakdown voltages in excess of 9.5 V, indicating that the selective contacts were nearly optimum. cw outputs of 500 μW at 50 mA drive current have been observed. The LED output spectrum was seen to tune with applied bias at a rate of about 650 meV/V at low temperatures.


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