TITLE

Rapid thermal annealing of YBaCuO films on Si and SiO2 substrates

AUTHOR(S)
Aslam, M.; Soltis, R. E.; Logothetis, E. M.; Ager, R.; Mikkor, M.; Win, W.; Chen, J. T.; Wenger, L. E.
PUB. DATE
July 1988
SOURCE
Applied Physics Letters;7/11/1988, Vol. 53 Issue 2, p153
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A very rapid thermal annealing technique has been employed on sputter-deposited YBaCuO films. After an O2 anneal (with or without a N2 preanneal) at temperatures as high as 920 °C for 8–12 s, films on (100)Si and on SiO2 /Si substrates exhibited superconductivity onsets above 95 K and zero resistance in the range 40–66 K.
ACCESSION #
9827354

 

Related Articles

  • Grain growth observation of <100> textured germanium film by transmission electron microscopy. Ogura, Atushi; Terao, Hiroshi // Applied Physics Letters;1/5/1987, Vol. 50 Issue 1, p16 

    Grain growth of <100> textured Ge films on amorphous SiO2 substrates during 900 °C isothermal annealing was observed by transmission electron microscopy. An rf sputtering technique was used to deposit the films. By using initially <100> textured film, grain growth (∼1.5 μm diameter)...

  • Interfacial reaction depending on the stack structure of Al2O3 and HfO2 during film growth and postannealing. Cho, M.-H.; Chung, K.B.; Chang, H.S.; Moon, D.W.; Park, S.A.; Kim, Y.K.; Jeong, K.; Whang, C.N.; Lee, D.W.; Ko, D.-H.; Doh, S.J.; Lee, J.H.; Lee, N.I. // Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p4115 

    Interfacial reactions as a function of the stack structure of Al2O3 and HfO2 grown on Si by atomic-layer deposition were examined by various physical and electrical measurements. In the case of an Al2O3 film with a buffer layer of HfO2, reactions between the Al2O3 and Si layers were suppressed,...

  • Temperature-dependent interfacial chemical bonding states and band alignment of HfOxNy/SiO2/Si gate stacks. He, G.; Meng, G. W.; Zhang, L. D.; Liu, M. // Applied Physics Letters;12/3/2007, Vol. 91 Issue 23, p232910 

    Temperature-dependent interfacial chemical bonding states and band alignment of HfOxNy/SiO2/Si gate stacks have been investigated by X-ray photoemission spectroscopy (XPS) and spectroscopic ellipsometry (SE). By means of the chemical shifts of Hf 4f, Si 2p, O 1s, and N 1s core-level spectra, it...

  • Improvement of SiO[sub 2]/Si interface by low-temperature annealing in wet atmosphere. Sano, N.; Sekiya, M. // Applied Physics Letters;4/17/1995, Vol. 66 Issue 16, p2107 

    Examines the role of low temperature annealing in improving silicon dioxide/silicon interface. Use of infrared absorption spectroscopy in assessing chemical bonding in silicon dioxide films; Rate of deposition of silicone dioxide films; Concentration of water and hydroxide group in the silicon...

  • A comparison between thermal annealing and ion mixing of multilayered Ni-W films on Si. II. Pai, C. S.; Lau, S. S.; Poker, D. B.; Hung, L. S. // Journal of Applied Physics;12/1/1985, Vol. 58 Issue 11, p4178 

    Presents a study which compared thermal annealing and ion mixing of multilayered nickel-tungsten films on silicon. Method of the study; Results and discussion; Conclusion.

  • Trapping of negative and positive charges in Ge[sup +] ion implanted silicon dioxide layers subjected to high-field electron injection. Nazarov, A. N.; Gebel, T.; Rebohie, L.; Skorupa, W.; Osiyuk, I. N.; Lysenko, V. S. // Journal of Applied Physics;10/1/2003, Vol. 94 Issue 7, p4440 

    Negative and positive charge trapping in a constant current regime under high-field electron injection both from Al electrode and Si substrate in high-dose Ge[sup +] ion implanted and then rapid thermal annealed thin-film dioxide has been studied. Negatively charged traps as well as generated...

  • Effect of annealing on Ge-doped SiO... thin films. Fujimaki, Makoto; Seol, Kwang Soo // Journal of Applied Physics;11/1/1999, Vol. 86 Issue 9, p5270 

    Focuses on a study on the effects of thermal annealing on the optical and structural properties of germanium-doped silicon dioxide thin films. Methods used to prepare the thin films; Experimental procedures; Results and discussion; Conclusion.

  • Effect of Annealing on the Interfacial and Structural Properties of Amorphous Silicon-Hafnia Films. Kohli, Sandeep; McCurdy, Patrick; Rithner, Christopher; Dorhout, Peter; Dummer, Ann; Menoni, Carmen // Metallurgical & Materials Transactions. Part A;Jan2011, Vol. 42 Issue 1, p71 

    Chemical and physical properties of the interface formed between amorphous silicon ( a-Si) and hafnium oxide (HfO) were investigated using X-ray reflectivity (XRR) and X-ray photoelectron spectroscopy (XPS). XRR showed that the interface layer formed between the a-Si and HfO layer had a...

  • A comparison between thermal annealing and ion mixing of alloyed Ni-W films on Si. I. Pai, C. S.; Lau, S. S.; Poker, D. B.; Hung, L. S. // Journal of Applied Physics;12/1/1985, Vol. 58 Issue 11, p4172 

    Presents a study which compared thermal annealing and ion mixing of alloyed nickel-tungsten films on silicon. Method of the study; Results and discussion; Conclusion.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics