TITLE

Molecular beam epitaxial growth of Fe/Cr multilayers on (001)GaAs

AUTHOR(S)
Etienne, P.; Creuzet, G.; Friederich, A.; Nguyen-Van-Dau, F.; Fert, A.; Massies, J.
PUB. DATE
July 1988
SOURCE
Applied Physics Letters;7/11/1988, Vol. 53 Issue 2, p162
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Molecular beam epitaxy has been used to grow single-crystal Fe/Cr magnetic multilayer structures on homoepitaxial (001)GaAs layers. The epitaxial relationships between Fe, Cr, and GaAs were determined by in situ reflection high-energy electron diffraction. The sharpness of the different interfaces of the Fe/Cr multilayers is illustrated by Auger electron spectroscopy sputter depth profiling, which shows that no significant intermixing occurs in the investigated growth temperature range -50 to +50 °C.
ACCESSION #
9827346

 

Related Articles

  • Magnetotransport properties of iron thin films. Chen, Youjun; Lottis, D. K.; Dahlberg, E. Dan // Journal of Applied Physics;11/15/1991, Vol. 70 Issue 10, p5822 

    Presents a study on the magnetotransports properties of iron thin films grown by molecular-beam epitaxy (MBE). Discovery of the magnetic reorientation-phase transition in molecular-beam-epitaxially grown iron films on (110) gallium arsenide; Experimental procedures; Analysis and results;...

  • A comparative study of the molecular-beam epitaxial growth of Ag/Fe, Ag/Cr, and Fe/Cr superlattices on GaAs (001). Etienne, P.; Lequien, S.; Nguyen-Van-Dau, F.; Cabanel, R.; Creuzet, G.; Friederich, A.; Massies, J.; Fert, A.; Barthélémy, A.; Petroff, F. // Journal of Applied Physics;5/1/1990, Vol. 67 Issue 9, p5400 

    Deals with a study which compared silver/iron, silver/chromium and iron/chromium superlattices grown on gallium arsenide (GaAs) by molecular beam epitaxy. Influence of the nature of metals involved in the superlattice structure; Steps in the growth process of GaAs; Characteristics of interfaces.

  • Perpendicular giant magnetoresistance of microstructures in Fe/Cr and Co/Cu multilayers (invited). Gijs, M. A. M.; Giesbers, J. B.; Johnson, M. T.; aan de Stegge, J. B. F.; Janssen, H. H. J. M.; Lenczowski, S. K. J.; van de Veerdonk, R. J. M.; de Jonge, W. J. M. // Journal of Applied Physics;5/15/1994, Vol. 75 Issue 10, p6709 

    Presents a study that discussed the fabrication and microstructuring techniques of pillar structures made of high vacuum sputtered iron (Fe)/ chromium (Cr) multilayers and of molecular beam epitaxy evaporated cobalt (Co)/copper (Cu) multilayers. Growth and characterization of the multilayers;...

  • Magnetic and transport properties of Fe/Cr superlattices (invited). Barthélémy, A.; Fert, A.; Baibich, M. N.; Hadjoudj, S.; Petroff, F.; Etienne, P.; Cabanel, R.; Lequien, S.; Nguyen Van Dau, F.; Creuzet, G. // Journal of Applied Physics;5/1/1990, Vol. 67 Issue 9, p5908 

    Presents a study which described the magnetic and transport properties of iron and chromium superlattices grown on gallium arsenide by molecular-beam epitaxy. Characterization of the superlattices by high-energy electron diffraction; Discussion of the magnetic behavior of the superlattices;...

  • Effects of substrate preparation conditions on GaAs oval defects grown by molecular beam epitaxy. Fujiwara, K.; Nishikawa, Y.; Tokuda, Y.; Nakayama, T. // Applied Physics Letters;3/17/1986, Vol. 48 Issue 11, p701 

    Effects of substrate preparation conditions, i.e., wet chemical and ultrahigh vacuum cleaning preparations, on GaAs oval defects grown by molecular beam epitaxy (MBE) were investigated. It is found that, with our MBE system, the presence of the smaller (<10 μm) ovally shaped defects without...

  • Nucleation and initial growth of GaAs on Si substrate. Rosner, S. J.; Koch, S. M.; Harris, J. S. // Applied Physics Letters;12/29/1986, Vol. 49 Issue 26, p1764 

    The microstructure of thin layers of GaAs grown on Si substrates at low growth temperatures by molecular beam epitaxy was examined using transmission electron microscopy and MeV 4He+ ion channeling angular scan analysis. Crystalline island formation is observed at temperatures as low as 325...

  • Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy. Allen, L. T. P.; Weber, E. R.; Washburn, J.; Pao, Y. C. // Applied Physics Letters;8/31/1987, Vol. 51 Issue 9, p670 

    Device quality (110)GaAs has been reproducibly grown by molecular beam epitaxy (MBE) for the first time. Angling of the substrate to expose stable, Ga-rich ledges on the (110) surface has been shown to be the necessary condition for two-dimensional growth. The layers exhibit a room-temperature...

  • Effect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densities. Chen, H. Z.; Ghaffari, A.; Morkoç, H.; Yariv, A. // Applied Physics Letters;12/21/1987, Vol. 51 Issue 25, p2094 

    Single quantum well, graded refractive index separate confinement heterostucture (SQW GRINSCH) lasers with well thicknesses in the range of 65–480 Å have been grown by molecular beam epitaxy (MBE) on (100) and off of (100) by 4° toward (111) A substrates. The threshold current...

  • Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures. Kaminska, M.; Liliental-Weber, Z.; Weber, E. R.; George, T.; Kortright, J. B.; Smith, F. W.; Tsaur, B-Y.; Calawa, A. R. // Applied Physics Letters;5/8/1989, Vol. 54 Issue 19, p1881 

    GaAs layers grown by molecular beam epitaxy (MBE) at substrate temperatures between 200 and 300 °C were studied using transmission electron microscopy (TEM), x-ray diffraction, and electron paramagnetic resonance (EPR) techniques. High-resolution TEM cross-sectional images showed a high...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics