Molecular beam epitaxial growth of Fe/Cr multilayers on (001)GaAs

Etienne, P.; Creuzet, G.; Friederich, A.; Nguyen-Van-Dau, F.; Fert, A.; Massies, J.
July 1988
Applied Physics Letters;7/11/1988, Vol. 53 Issue 2, p162
Academic Journal
Molecular beam epitaxy has been used to grow single-crystal Fe/Cr magnetic multilayer structures on homoepitaxial (001)GaAs layers. The epitaxial relationships between Fe, Cr, and GaAs were determined by in situ reflection high-energy electron diffraction. The sharpness of the different interfaces of the Fe/Cr multilayers is illustrated by Auger electron spectroscopy sputter depth profiling, which shows that no significant intermixing occurs in the investigated growth temperature range -50 to +50 °C.


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