TITLE

Unusual low-temperature behavior of Fermi level movement at the Sb/GaAs interface

AUTHOR(S)
Cao, Renyu; Miyano, K.; Lindau, I.; Spicer, W. E.
PUB. DATE
July 1988
SOURCE
Applied Physics Letters;7/11/1988, Vol. 53 Issue 2, p137
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The temperature dependence of the development of the Sb/GaAs electronic properties has been found to be quite small, compared to that seen with a large number of metal/GaAs interfaces studied previously. This has been correlated with the relatively small change in interface morphology due to reducing the temperature. The interface morphology and the Fermi level movement at the Sb/GaAs(110) interface were studied using photoelectron spectroscopy at room temperature and low temperature (80 K). The Sb/GaAs interface is uniform and abrupt at two temperatures. Two distinct Fermi level pinning positions are observed: 0.75 eV for n-type GaAs and 0.5 eV for p-type GaAs above the valence-band maximum independent of the temperature. The results are discussed in terms of mechanisms of Schottky barrier formation.
ACCESSION #
9827327

 

Related Articles

  • Influence of Sb, Bi, Tl, and B on the incorporation of N in GaAs. Dimroth, F.; Howard, A.; Shurtleff, J. K.; Stringfellow, G. B. // Journal of Applied Physics;3/15/2002, Vol. 91 Issue 6, p3687 

    GaAs:N is an interesting material for many devices due to its unique compositional variation of band gap. Small amounts of N lead to a strong decrease in band gap energy as well as lattice constant. The further addition of In or Sb leads to quaternary alloys with band gap energies below 1.4 eV...

  • Electron traps in GaAs:Sb grown by liquid phase epitaxy. Dhar, S.; Mallik, Kanad; Mazumdar, Mousumi // Journal of Applied Physics;2/15/1995, Vol. 77 Issue 4, p1531 

    Focuses on a study which examined electron traps in gallium arsenide (GaSb) doped with antimony (Sb) and grown by liquid phase epitaxy. Introduction to deep level transient spectroscopy studies of GaAs:Sb; Experimental details; Results and discussion.

  • Direct observation by reflection high-energy electron diffraction of amorphous-to-crystalline transition in the growth of Sb on GaAs(110). Savage, D. E.; Lagally, M. G. // Applied Physics Letters;6/15/1987, Vol. 50 Issue 24, p1719 

    Direct evidence, using reflection high-energy electron diffraction, is found for a transition, at a specific thickness, from an amorphous to a crystalline state in Sb deposited on GaAs(110). After crystallization, Sb exists as small, 30–40 Å crystallites with a (0001) contact plane...

  • Native defects in the AlxGa1-xSb alloy semiconductor. Ichimura, M.; Higuchi, K.; Hattori, Y.; Wada, T.; Kitamura, N. // Journal of Applied Physics;12/15/1990, Vol. 68 Issue 12, p6153 

    Calculates the defect concentrations in Al[subx]Ga[sub1-x]Sb which is in equilibrium with a liquid phase. Enthalpies and entropies of defect formations in gallium antimonide (Sb) and aluminum antimonide; Composition dependence of defect concentrations in Al[subx]Ga[sub1-x]Sb in equilibrium with...

  • Antimony passivation of molecular-beam epitaxially grown GaAs surfaces. Kerr, T. M.; Peacock, D. C.; Wood, C. E. C. // Journal of Applied Physics;3/1/1988, Vol. 63 Issue 5, p1494 

    Presents a study which examined antimony passivation of molecular beam epitaxially grown gallium arsenide surfaces. Problems with the thermal etching of gallium arsenide as a technique for liquid- and vapor-phase epitaxy; Experimental details; Results.

  • Structure of GaSb layers grown on (111) GaAs surfaces. Babkevich, A. Yu.; Cowley, R. A.; Mason, N. J.; Shields, P. A.; Stadelman, T.; Brown, S.; Mannix, D.; Paul, D. // Journal of Applied Physics;9/1/2004, Vol. 96 Issue 5, p3012 

    The structure of GaSb layers with thicknesses of 70 Ã…, 160 Ã…, and 1260 Ã… grown on GaAs (111) substrates by metal-organic vapor phase epitaxy has been studied by high-resolution x-ray diffraction. The lattice mismatch between the layer and the substrate is large and most of the misfit...

  • Temperature dependence of the energy gap and spin-orbit splitting in a narrow-gap InGaAsSb solid solution. Motyka, M.; Janiak, F.; Polish_hook, G.; Misiewicz, J.; Moiseev, K. D. // Applied Physics Letters;5/21/2012, Vol. 100 Issue 21, p211906 

    Temperature dependence of the energy gap and the spin-orbit split off transition in a thick layer of narrow-gap InGaAsSb material with high In content has been determined by a combination of photoluminescence and photoreflectance. The respective temperature coefficients have been found to be...

  • Effective mass of two-dimensional electrons in InGaAsN/GaAsSb type II quantum well by Shubnikov-de Haas oscillations. Shuichi Kawamata; Akira Hibino; Sho Tanaka; Yuichi Kawamura // Journal of Applied Physics;2016, Vol. 120 Issue 14, p1 

    In order to develop optical devices for 2-3 µm wavelength regions, the InP-based InGaAs/GaAsSb type II multiple quantum well system has been investigated. By doping nitrogen into InGaAs layers, the system becomes effective in creating the optical devices with a longer wavelength. In this...

  • Displacement field and the aptness of models of the nonequilibrium ordering in III–V composites. Maksimov, K. S.; Maksimov, S. K. // Technical Physics Letters;Jun98, Vol. 24 Issue 6, p489 

    Experimental images with interference contrast for GaAsP/GaAs composites with self-modulated composition are compared to the calculated images. The calculated images correspond to two laws of variation of the composition deriving from the model of conjugate phases (a) and the "synergetic" model...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics