TITLE

Diffusion coefficient of a pair of nitrogen atoms in float-zone silicon

AUTHOR(S)
Itoh, Taizoh; Abe, Takao
PUB. DATE
July 1988
SOURCE
Applied Physics Letters;7/4/1988, Vol. 53 Issue 1, p39
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Outdiffusion profiles of nitrogen in silicon were measured by secondary ion mass spectrometry to determine its diffusion coefficient in a temperature range of 800–1200 °C. The total amount of the nitrogen outdiffusion agrees with the change in infrared absorption by heat treatment. The experimental results give the diffusion coefficient of nitrogen as D=2.7×103 exp(-2.8eV/kT)cm2/s. This value is five orders of magnitude larger compared with the reported expression of 0.87 exp(-3.29eV/kT)cm2/s. Nitrogen–nitrogen-pair-like molecule in crystals corresponds to the former value and substitutional nitrogen atom to the latter one. These two types of nitrogen in silicon may allow us to clarify the various effects of nitrogen such as strengthening of crystals and suppression of swirls and D-defect generation.
ACCESSION #
9827313

 

Related Articles

  • Anomalous diffusion of nitrogen in nitrogen-implanted silicon. Hockett, R. S. // Applied Physics Letters;5/1/1989, Vol. 54 Issue 18, p1793 

    A secondary-ion mass spectrometry analysis of the coimplantation of nitrogen, carbon, and oxygen into float-zone silicon followed by rapid thermal annealing for 10 s at different temperatures is used to study the anomalous diffusion behavior of nitrogen in silicon. The results may be only...

  • Influence of annealing ambient on oxygen out-diffusion in Czochralski silicon. Yamazaki, Hideyuki; Matsushita, Hiroshi; Sugamoto, Junji; Tsuchiya, Norihiko // Journal of Applied Physics;5/1/2000, Vol. 87 Issue 9, p4194 

    The out-diffusion of oxygen in Czochralski grown silicon (100) wafers annealed at high temperature under a hydrogen or an argon ambient has been investigated by secondary ion mass spectrometry (SIMS). The wafers were annealed with three successive process: loading of wafers into furnace at 850...

  • High-energy Si implantation into InP:Fe. Nadella, Ravi K.; Rao, Mulpuri V.; Simons, David S.; Chi, Peter H.; Fatemi, M.; Dietrich, H. B. // Journal of Applied Physics;8/1/1991, Vol. 70 Issue 3, p1750 

    Presents information on a study which performed high-energy silicon (Si) implantations into InP:Fe. Use of secondary-ion mass spectrometry to establish the first four moments of the Si implant depth distribution; Statistical moments of the Si atom density depth distributions; Effect of implant...

  • SIMS depth profiling of thin boron nitride insulating films. Cwil, M.; Firek, P.; Konarski, P.; Werbowy, A. // Materials Science (0137-1339);2008, Vol. 26 Issue 1, p135 

    Secondary ion mass spectrometry (SIMS) has been used to determine depth profiles of thin boron nitride films adapted as insulators in metal--insulator--semiconductor (MIS) devices. The negative secondary ion detection has been chosen to overcome the sample surface charging due to Ar+ primary ion...

  • Secondary ion mass spectrometry of hyper-abrupt doping transitions fabricated by limited reaction processing. Turner, J. E.; Amano, Jun; Gronet, C. M.; Gibbons, J. F. // Applied Physics Letters;6/1/1987, Vol. 50 Issue 22, p1601 

    Secondary ion mass spectrometry (SIMS) is used to quantify the abruptness of hyper-abrupt B-doping profiles in epitaxial silicon grown by limited reaction processing (LRP). By measuring the abruptness of dopant profiles as a function of SIMS primary beam energy and extrapolating to zero energy,...

  • Diffusion of implanted beryllium in silicon carbide studied by secondary ion mass spectrometry. Henkel, T.; Tanaka, Y.; Kobayashi, N.; Tanoue, H.; Hishita, S. // Applied Physics Letters;1/8/2001, Vol. 78 Issue 2, p231 

    The diffusion behavior of beryllium implanted in silicon carbide has been investigated by secondary ion mass spectrometry. The shape of the as implanted profile changed considerably after annealing at temperatures above 1300 °C due to redistribution processes. In addition, strong out...

  • Si-Si pair diffusion and correlation in AlxGa1-xAs and GaAs. Gavrilovic, P.; Gavrilovic, J.; Meehan, K.; Kaliski, R. W.; Guido, L. J.; Holonyak, N.; Hess, K.; Burnham, R. D. // Applied Physics Letters;10/1/1985, Vol. 47 Issue 7, p710 

    The Si impurity is diffused into GaAs at temperatures in the range 725≤T≤850 °C. Secondary ion mass spectrometry (SIMS) analysis is used to obtain the Si atom density in the Si-diffused layers. On the basis of the SIMS data and the observation of a distinct exciton peak in...

  • Outdiffusion and diffusion mechanism of oxygen in silicon. Lee, S.-Tong; Nichols, D. // Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p1001 

    The outdiffusion profiles of oxygen in Czochralski Si(111) within the temperature range 700–1160 °C and for three processing conditions (nitrogen atmosphere, steam oxidation, and phosphorus indiffusion) were measured by secondary ion mass spectrometry. The diffusivity and solubility of...

  • An 18O study of oxygen exchange phenomena during microwave-discharge plasma oxidation of silicon. Kimura, Shin-ichiro; Murakami, Eiichi; Warabisako, Terunori; Mitani, Eisuke; Sunami, Hideo // Journal of Applied Physics;5/1/1988, Vol. 63 Issue 9, p4655 

    Presents information on a study which investigated the mechanism of oxygen migration during microwave-plasma oxidation of silicon (Si), using secondary ion mass spectroscopy depth-profile analysis and [sup18]oxygen as a tracer. Apparatus used in the plasma oxidation of Si; Results of isotope...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics