In situ substrate-surface cleaning for very low temperature silicon epitaxy by low-kinetic-energy particle bombardment

Ohmi, T.; Ichikawa, T.; Shibata, T.; Matsudo, K.; Iwabuchi, H.
July 1988
Applied Physics Letters;7/4/1988, Vol. 53 Issue 1, p45
Academic Journal
A very low temperature in situ substrate-surface cleaning process utilizing low-kinetic-energy particle bombardment has been developed. Dramatic improvements have been achieved in the crystallinity of epitaxial silicon films grown by the newly developed low-kinetic-energy particle process, in which argon ions having precisely controlled energies are continuously bombarding the film surface during the entire growth operation. With the optimized substrate-surface cleaning conditions, in which the contaminants on the surface of silicon substrates are removed without introducing any damages to the substrates, the epitaxial silicon layer with a perfect crystallinity has been obtained at such very low temperatures below 350 °C.


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