Boron surface segregation in silicon molecular beam epitaxy

de Frésart, E.; Wang, K. L.; Rhee, S. S.
July 1988
Applied Physics Letters;7/4/1988, Vol. 53 Issue 1, p48
Academic Journal
Boron surface segregation in Si molecular beam epitaxy has been measured on Si(111) substrate as a function of the growth temperature (400 °C≤Ts≤900 °C) by Auger electron spectroscopy. Boron oxide (B2O3) was used as dopant material to achieve a boron concentration level of about 1×1019 cm-3. Three temperature regions are observed for the behavior of the ratio rd=Is/Ib of the surface (Is) to the bulk (Ib) dopant atomic fractions. At low temperature, Ts=400–570 °C the ratio maintains at the value rd[bar_over_tilde:_approx._equal_to]1.5. For 570 °C≤Ts≤720 °C, rd increases to a plateau rd[bar_over_tilde:_approx._equal_to]5.5, and then jumps to rd=42 in the 720–750 °C region. At higher temperature, Ts≥750 °C, rd decreases according to a relation which can be approximated by the classical equilibrium segregation theory. In that region, the boron Gibbs free energy of surface segregation is calculated from data to be ΔGS=-0.33±0.02 eV. Evolution of rd is closely correlated to the etch pit count and electron channeling results revealing amorphous, polycrystalline, and epitaxial growth, when going from low to high growth temperature.


Related Articles

  • Boron heavy doping for Si molecular beam epitaxy using a HBO2 source. Tatsumi, Toru; Hirayama, Hiroyuki; Aizaki, Naoaki // Applied Physics Letters;5/4/1987, Vol. 50 Issue 18, p1234 

    Boron doping with a high carrier concentration has been realized in Si molecular beam epitaxy (MBE) using a HBO2 source with the usual Knudsen cell. Maximum carrier concentration has reached 6×1020 cm-3 at crucible temperatures of 900 °C. From a comparison between activation energy for...

  • Origin and reduction of interfacial boron spikes in silicon molecular beam epitaxy. Iyer, S. S.; Delage, S. L.; Scilla, G. J. // Applied Physics Letters;2/8/1988, Vol. 52 Issue 6, p486 

    An interfacial boron spike is formed during the molecular beam epitaxial growth of Si. We show two possible sources for this unintentional spike. We have found that some boron contamination invariably occurs when silicon surfaces are exposed to air. A greater degree of contamination results when...

  • Influence of boron on radiation enhanced diffusion of antimony in delta-doped silicon. Le´ve⁁que, P.; Christensen, J. S.; Kuznetsov, A. Yu.; Svensson, B. G.; Larsen, A. Nylandsted // Journal of Applied Physics;4/1/2002, Vol. 91 Issue 7, p4073 

    The silicon samples used in this work contain a sequence of alternating boron and antimony spikes grown by molecular beam epitaxy. These samples were irradiated with 2.5 MeV protons at elevated temperatures ranging from 580 °C to 830 °C and characterized by secondary-ion mass spectrometry....

  • B-doped Si(001) grown by gas-source molecular-beam epitaxy from Si2H6 and B2H6:B incorporation and electrical properties. Lu, Q.; Bramblett, T. R.; Lee, N.-E.; Hasan, M.-A.; Karasawa, T.; Greene, J. E. // Journal of Applied Physics;4/1/1995, Vol. 77 Issue 7, p3067 

    Deals with a study which grew boron-doped silicon films on silicon substrates by gas-source molecular beam epitaxy (GS-MBE) using Si[sub2]H[sub6] and B[sub2]H[sub6]. Background on GS-MBE; Experimental procedure; Experimental results; Discussion.

  • Heavily boron-doped Si layers grown below 700 °C by molecular beam epitaxy using a HBO2 source. Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J. // Applied Physics Letters;8/21/1989, Vol. 55 Issue 8, p795 

    Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500–700 °C using a HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass...

  • Realization of nearly two-dimensional growth mode for AlP on Si(100) substrate by a low.... Maruyama, H.; Pak, K.; Sakakibara, K.; Yonezu, H. // Applied Physics Letters;10/25/1993, Vol. 63 Issue 17, p2375 

    Investigates the growth of aluminum phosphide layers on silicon (Si)(100) substrates by molecular beam epitaxy (MBE) and migration enhanced epitaxy. Detection of island growth mode from an initial MBE growth stage; Use of Auger electron spectroscopy; Observation of reflection high-energy...

  • Silicon segregation in delta-doped GaAs characterized by Auger electron spectroscopy. Webb, Chris // Applied Physics Letters;5/22/1989, Vol. 54 Issue 21, p2091 

    We have used Auger electron spectroscopy as a direct measure of silicon segregation in molecular beam epitaxy grown delta-doped GaAs. We find that this technique allows very precise detection of Si segregation. Spectra have been obtained, as a function of temperature, from samples in which Si...

  • GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxy. Nakada, Yoshinobu; Aksenov, Igor; Okumura, Hajime // Applied Physics Letters;8/10/1998, Vol. 73 Issue 6, p827 

    Wurtzite GaN films were grown on silicon nitride buffer layers formed on Si (111) substrates by radio frequency plasma-assisted molecular beam epitaxy. Reflection high energy electron diffraction, Auger electron spectroscopy, transmission electron microscopy, and photoluminescence results...

  • Abrupt Boron Profiles by Silicon-MBE. Oehme, M.; Kasper, E. // International Journal of Modern Physics B: Condensed Matter Phys;11/20/2002, Vol. 16 Issue 28/29, p4285 

    Surface segregation and diffusion are the dominant mechanisms for profile smearing. However in the low temperature regime below 600°C diffusion is negligible. We investigated the dopant profile during silicon molecular beam epitaxy (MBE) in silicon (100). A method for measurement of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics