Effect of oxygen precipitation on phosphorus diffusion in Czochralski silicon

Ahn, S. T.; Kennel, H. W.; Plummer, J. D.; Tiller, W. A.; Rek, Z. U.; Stock, S. R.
July 1988
Applied Physics Letters;7/4/1988, Vol. 53 Issue 1, p34
Academic Journal
The effects of oxygen precipitation and surface films (SiO2 vs Si3N4) on P diffusion at 1100 °C in Czochralski silicon have been studied. With a fast precipitation rate, P diffusion under both kinds of films is enhanced because of the supersaturation of Si interstitials caused by oxygen precipitation. The larger enhancement in P diffusion under Si3N4 than that under SiO2 covered with Si3N4 is attributed to the slower recombination velocity of interstitials at the Si3N4/Si interface. P diffusion in a denuded zone behaves like that in float-zone Si until the interstitials generated under that zone arrive at the interface.


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