Work hardening and strain relaxation in strained-layer buffers

Dodson, Brian W.
July 1988
Applied Physics Letters;7/4/1988, Vol. 53 Issue 1, p37
Academic Journal
Fully relaxed buffer layers are of considerable importance for growth of high quality crystals on substrates having different lattice parameters. Recent experiments by Biefeld et al. [R. M. Biefeld, C. R. Hills, and S. R. Lee, J. Cryst. Growth (in press)] in the InAsSb system show that the degree of relaxation is considerably less than expected using conventional equilibrium models, but is more complete in continuously graded than in step-graded buffer layers. In the present letter, this observation is explained in terms of Taylor-type (dislocation interaction) work hardening.


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