Magnetophonon effect in GaAs Schottky gate field-effect transistors

Judd, T. P. C.; Pepper, M.; Hill, G.
July 1988
Applied Physics Letters;7/4/1988, Vol. 53 Issue 1, p54
Academic Journal
We have investigated the magnetophonon resonance in lightly doped GaAs Schottky gate field-effect transistors of different shape. It is shown that the phase and amplitude of the observed oscillations are dependent upon geometrical considerations. A model is presented in good agreement with experiment.


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