TITLE

Magnetophonon effect in GaAs Schottky gate field-effect transistors

AUTHOR(S)
Judd, T. P. C.; Pepper, M.; Hill, G.
PUB. DATE
July 1988
SOURCE
Applied Physics Letters;7/4/1988, Vol. 53 Issue 1, p54
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated the magnetophonon resonance in lightly doped GaAs Schottky gate field-effect transistors of different shape. It is shown that the phase and amplitude of the observed oscillations are dependent upon geometrical considerations. A model is presented in good agreement with experiment.
ACCESSION #
9827262

 

Related Articles

  • Effect of gate voltage on hot-electron and hot phonon interaction and transport in a submicrometer transistor. Majumdar, A.; Fushinobu, K.; Hijikata, K. // Journal of Applied Physics;6/15/1995, Vol. 77 Issue 12, p6686 

    Presents a study which examined the effect of gate voltage on hot-electron and hot-phonon interaction and transport in a metal-semiconductor field effect transistor made of gallium arsenide. Mechanisms of heat generation and transport in gallium arsenide; Equations, properties and numerics;...

  • The Effect of Hydrogenation on the Sink Breakdown Voltage of Transistors Based on Ion-Doped Gallium Arsenide Structures. Kagadeı, V. A.; Nefyodtsev, E. V.; Proskurovsky, D. I.; Romanenko, S. V.; Shirokova, L. S. // Technical Physics Letters;Jan2003, Vol. 29 Issue 1, p12 

    It was found that the hydrogenation of ion-doped gallium arsenide structures leads to an increase in the sink breakdown voltage of high-power microwave Schottky barrier field effect transistors based on such structures (from 7 up to 17 V) and in the power of related microwave integration...

  • A 30-nm-Gate Field-Effect Transistor. Obolenskiı, S. V.; Kitaev, M. A. // Technical Physics Letters;May2000, Vol. 26 Issue 5, p408 

    The fabrication technology is developed for and characteristics are investigated of a GaAs Schottky-barrier field-effect transistor (SBFET) with an effective gate length of 30 nm. The SBFET power gain cutoff frequency is 150 GHz. The noise factor at 12-37 GHz is comparable with that of...

  • Si-implanted InGaP/GaAs metal-semiconductor field-effect transistors. Hyuga, Fumiaki; Aoki, Tatsuo // Applied Physics Letters;4/20/1992, Vol. 60 Issue 16, p1963 

    Proposes a device structure for silicon-implanted gallium arsenide (GaAs) metal-semiconductor field-effect transistors. Qualities of annealed indium-gallium phosphide/GaAs interfaces; Details on the intensity of the GaAs band-edge photoluminescence; Ways to achieve high-density GaAs integrated...

  • Elimination of the kink effect in GaAs metal semiconductor field-effect transistors by utilizing.... Haruyama, Junzi; Goto, Norio // Applied Physics Letters;8/24/1992, Vol. 61 Issue 8, p928 

    Investigates the elimination of the kink effect in gallium arsenide metal semiconductor field-effect transistors (FET) by utilizing a low-temperature buffer (LTB) layer. Components of LTB layer; Characteristics of the sidegating effect; Causes of the kink effect in type B FET.

  • Photoemissions related to the kink effect in GaAs metal-semiconductor field-effect transistors.... Haruyama, Junzi; Goto, Norio // Applied Physics Letters;8/2/1993, Vol. 63 Issue 5, p648 

    Examines the photoemission phenomena observed in gallium arsenide metal-semiconductor field-effect transistors. Relevance of bremsstrahlung radiation to light emission; Measurement of photoemission spectra to investigate drain voltage mechanism; Alteration in photoemission intensity following...

  • Sulfur passivation of GaAs metal-semiconductor field-effect transistor. Dong, Y.; Ding, X. M.; Ding, X.M.; Hou, X. Y.; Hou, X.Y.; Li, Y.; Li, X. B.; Li, X.B. // Applied Physics Letters;12/4/2000, Vol. 77 Issue 23 

    A passivation technique consisting of a (NH[sub 4])[sub 2]S dip followed by GaS deposition has been applied to a GaAs microwave-power metal-semiconductor field-effect transistor (MESFET). The breakdown characteristic of the MESFET is greatly improved upon the (NH[sub 4])[sub 2]S treatment, and a...

  • Thermal and chemical stability of Schottky metallization on GaAs. Lau, S. S.; Chen, W. X.; Marshall, E. D.; Pai, C. S.; Tseng, W. F.; Kuech, T. F. // Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1298 

    The high-temperature stability of Schottky barriers on GaAs has been correlated with the thermodynamic driving force for chemical reaction between the metallic contacts and the substrate. The chemical stability of a gate metallurgy can result in the stability of the electrical characteristics of...

  • Direct variation of metal-GaAs Schottky barrier height by the influence of interface S, Se, and Te. Waldrop, J. R. // Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1301 

    The electrical properties and interface chemistry of Schottky barrier contacts (Ag, Al, Au, Mn, Pr, and Ti) formed on n-type GaAs 〈100〉 surfaces that had prior exposure to elemental S, Se, and Te are compared to those of ideal (metal deposited onto a clean surface) contacts. The...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics