TITLE

Outdiffusion of oxygen and carbon in Czochralski silicon

AUTHOR(S)
Shimura, F.; Higuchi, T.; Hockett, R. S.
PUB. DATE
July 1988
SOURCE
Applied Physics Letters;7/4/1988, Vol. 53 Issue 1, p69
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The outdiffusion behavior of oxygen and carbon in heat-treated Czochralski (CZ) silicon has been investigated by secondary ion mass spectroscopy. The results show that oxygen diffusion is greatly retarded by oxygen precipitation and strongly support a vacancy-dominant diffusion mechanism for oxygen in silicon. In carbon-doped CZ silicon, the diffusion of both oxygen and carbon is greatly enhanced at 750 °C, but is significantly retarded at 1000 °C. In conjunction with the infrared absorption data, the enhanced diffusion has been attributed to the formation of fast-diffusing O-C complexes, while the retarded diffusion of carbon has been tentatively attributed to the formation of slow-diffusing complexes, such as Si-O-C.
ACCESSION #
9827260

 

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