Room-temperature copper metallization for ultralarge-scale integrated circuits by a low kinetic-energy particle process

Ohmi, T.; Saito, T.; Shibata, T.; Nitta, T.
June 1988
Applied Physics Letters;6/27/1988, Vol. 52 Issue 26, p2236
Academic Journal
Copper films were epitaxially grown on (100)Si substrates at room temperatures utilizing low kinetic-energy particle bombardment of growing copper film surfaces. The crystallographic structure of the film, such as (100) or (111) orientation, was selected by controlling the energy of incident particles. Low-temperature, damage-free substrate surface cleaning has also been realized by the low kinetic-energy particle process, which has made it possible to form ideal metal-semiconductor contacts without employing any alloying heat cycles.


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