TITLE

Extreme nonequilibrium electron transport in heterojunction bipolar transistors

AUTHOR(S)
Berthold, K.; Levi, A. F. J.; Walker, J.; Malik, R. J.
PUB. DATE
June 1988
SOURCE
Applied Physics Letters;6/27/1988, Vol. 52 Issue 26, p2247
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We use hot-electron spectroscopy to demonstrate the existence of extreme nonequilibrium electron transport in the base of n-p-n heterojunction bipolar transistors. In the device, electrons are tunnel injected into a thin (∼300 Å wide), degenerately doped, p-type GaAs base.
ACCESSION #
9827235

 

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