High Tc YBa2Cu3O7-x thin films on Si substrates by dc magnetron sputtering from a stoichiometric oxide target

Lee, W. Y.; Salem, J.; Lee, V.; Huang, T.; Savoy, R.; Deline, V.; Duran, J.
June 1988
Applied Physics Letters;6/27/1988, Vol. 52 Issue 26, p2263
Academic Journal
Thin films of YBa2Cu3O7-x were deposited on Si substrates at 600–700 °C by dc magnetron sputtering from a stoichiometric oxide target. Resistivity measurement results indicate that these films are superconducting with a zero resistance Tc as high as 76 K, without further high-temperature post-annealing treatments. These films give both core and valence-band x-ray photoemission, and x-ray diffraction spectra similar to those for superconducting films prepared with a high-temperature post-annealing step. No significant diffusion of Si from the substrate into the film was detected for the films deposited at 650 °C or lower, according to depth profiles obtained using secondary ion mass spectrometry.


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