Comment on ‘‘Evidence for Si diffusion through epitaxial NiSi2 grown on Si(111)’’ [Appl. Phys. Lett. 50, 1257 (1987)]

d’Heurle, F. M.; Thomas, O.
June 1988
Applied Physics Letters;6/27/1988, Vol. 52 Issue 26, p2269
Academic Journal
Comments on the article 'Evidence for Si diffusion through epitaxial NiSi[sub2] grown on Si(111),' written by V. Hinkel, et al, and published in the journal 'Applied Physics Letters' in 1987. Demonstration of the presence of an adsorbed layer of silicon at the surface of NiSi[sub2]; Absence of evidence about the path followed to arrive at the adsorbed silicon layer.


Related Articles

  • Response to ‘‘Comment on ‘Evidence for Si diffusion through epitaxial NiSi2 grown on Si(111)’ ’’ [Appl. Phys. Lett. 52, 2269 (1988)]. Hinkel, V.; Sorba, L.; Haak, H.; Horn, K.; Braun, W. // Applied Physics Letters;6/27/1988, Vol. 52 Issue 26, p2269 

    Responds to comments made by F.M. d'Heurle and O. Thomas about the authors' article 'Evidence for Si diffusion through epitaxial NiSi[sub2] grown on Si(111),' which was published in a 1987 issue of 'Applied Physics Letters.' Formation mechanism of the top silicon layers; Metal atom diffusion...

  • Dimer-flipping-assisted diffusion on a Si(001) surface. Zi, J.; Min, B. J.; Min, B.J.; Lu, Y.; Wang, C. Z.; Wang, C.Z.; Ho, K. M.; Ho, K.M. // Applied Physics Letters;12/18/2000, Vol. 77 Issue 25 

    The binding sites and diffusion pathways of Si adatoms on a c(4x2) reconstructed Si(001) surface are investigated by a tight-binding method with an environment-dependent silicon potential in conjunction with ab initio calculations using the Car-Parrinello method. A new diffusion pathway along...

  • Silane adsorption on Si(001)2×1. Hirose, Fumihiko; Suemitsu, Maki; Miyamoto, Nobuo // Journal of Applied Physics;11/15/1991, Vol. 70 Issue 10, p5380 

    Presents a study which investigated surface hydrogen coverage and surface reconstruction of a silane-saturated Si(001)2X1 surface. Processes in silicon epitaxy; Details of experimental techniques used; Comparison of hydrogen coverage between two hydrogenated surfaces.

  • Self-organization of step bunching instability on vicinal substrate. Pascale, A.; Berbezier, I.; Ronda, A.; Videcoq, A.; Pimpinelli, A. // Applied Physics Letters;9/4/2006, Vol. 89 Issue 10, p104108 

    The authors investigate quantitatively the self-organization of step bunching instability during epitaxy of Si on vicinal Si(001). They show that growth instability evolution can be fitted by power laws L∼tα and A∼tβ (where L is the correlation length and A is the instability...

  • Limited reaction processing: Silicon epitaxy. Gibbons, J. F.; Gronet, C. M.; Williams, K. E. // Applied Physics Letters;10/1/1985, Vol. 47 Issue 7, p721 

    We introduce a new technique, limited reaction processing, in which radiant heating is used to provide rapid, precise changes in the temperature of a substrate to control surface reactions. This process was used to fabricate thin layers of high quality epitaxial silicon. Abrupt transitions in...

  • Formation of Submicron Cylindrical Structures at Silicon Surface Exposed to a Compression Plasma Flow. Uglov, V. V.; Anishchik, V. M.; Astashynski, V. V.; Astashynski, V. M.; Ananin, S. I.; Askerko, V. V.; Kostyukevich, E. A.; Kuz’mitski, A. M.; Kvasov, N. T.; Danilyuk, A. L. // JETP Letters;8/25/2001, Vol. 74 Issue 4, p213 

    Submicron-sized cylindrical structures were obtained at the surface of silicon single crystal exposed to a compression plasma flow. A periodic structure formed by channels oriented normally to the surface was observed inside the modified surface layer. The period of the structure corresponded to...

  • Buckling suppression of SiGe islands on compliant substrates. Yin, Haizhou; Huang, R.; Hobart, K. D.; Liang, J.; Suo, Z.; Shieh, S. R.; Dully, T. S.; Kub, F J.; Sturm, J. C. // Journal of Applied Physics;11/15/2003, Vol. 94 Issue 10, p6875 

    A cap layer was used to suppress buckling during the relaxation of compressively strained 30 nm Si[sub 0.7]Ge[sub 0.3] islands on borophosphorosilicate glass. The lateral expansion and buckling of a bilayer structure made of SiGe and a cap layer were studied by both modeling and experiment. Both...

  • On the kinetic barriers of graphene homo-epitaxy. Wei Zhang; Xinke Yu; Cahyadi, Erica; Ya-Hong Xie; Ratsch, Christian // Applied Physics Letters;12/1/2014, Vol. 105 Issue 22, p1 

    The diffusion processes and kinetic barriers of individual carbon adatoms and clusters on graphene surfaces are investigated to provide fundamental understanding of the physics governing epitaxial growth of multilayer graphene. It is found that individual carbon adatoms form bonds with the...

  • Growth of Si[sub 0.75]Ge[sub 0.25] alloy layers grown on Si(001) substrates using step-graded short-period (Si[sub m]/Ge[sub n])[sub N] superlattices. Rahman, M. M.; Matada, H.; Tambo, T.; Tatsuyama, C. // Journal of Applied Physics;7/1/2001, Vol. 90 Issue 1, p202 

    Short-period (Si[sub m]/Ge[sub n])[sub N] superlattices (SSLs) are grown step by step on a Si(001) substrates by solid source molecular beam epitaxy. Using the step-graded SSLs as buffer layers, 2000 Ã… uniform Si[sub 0.75]Ge[sub 0.25] alloy layers are grown on the same substrates. The growth...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics