TITLE

Comment on ‘‘Evidence for Si diffusion through epitaxial NiSi2 grown on Si(111)’’ [Appl. Phys. Lett. 50, 1257 (1987)]

AUTHOR(S)
d’Heurle, F. M.; Thomas, O.
PUB. DATE
June 1988
SOURCE
Applied Physics Letters;6/27/1988, Vol. 52 Issue 26, p2269
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Comments on the article 'Evidence for Si diffusion through epitaxial NiSi[sub2] grown on Si(111),' written by V. Hinkel, et al, and published in the journal 'Applied Physics Letters' in 1987. Demonstration of the presence of an adsorbed layer of silicon at the surface of NiSi[sub2]; Absence of evidence about the path followed to arrive at the adsorbed silicon layer.
ACCESSION #
9827221

 

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