n-Si/p-Si1-xGex/n-Si double-heterojunction bipolar transistors

Xu, Dan-Xia; Shen, Guang-Di; Willander, M.; Ni, Wei-Xin; Hansson, G. V.
June 1988
Applied Physics Letters;6/27/1988, Vol. 52 Issue 26, p2239
Academic Journal
Two different structures of n-Si/p-Si1-xGex/n-Si double-heterojunction bipolar transistors have been fabricated by molecular beam epitaxy. A common emitter current gain β of about 15 was demonstrated in one kind of structure and the β-IC curve has been investigated. In the other structure, a novel multistep collector current IC vs collector-emitter voltage VCE characteristic together with a strong negative resistance behavior was observed at room temperature. In this letter the basic experiments are described; a comparison and a discussion of the two kinds of devices are presented.


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