Effects of heavy impurity doping on electron injection in p+-n GaAs diodes

Klausmeier-Brown, M. E.; Lundstrom, M. S.; Melloch, M. R.; Tobin, S. P.
June 1988
Applied Physics Letters;6/27/1988, Vol. 52 Issue 26, p2255
Academic Journal
Measurements of electron injection currents in p+-n diodes are presented for a range of p-type dopant concentrations. A successive etch technique was used to characterize the electron injection current in terms of the product (noDn). Measurements are presented for Zn-doped GaAs solar cells with p-layer hole concentrations in the range 6.3×1017-1.3×1019 cm-3. The results demonstrate that so-called band-gap narrowing effects substantially increase the injected electron current in heavily doped p-type GaAs. These heavy doping effects must be accounted for in the modeling and design of GaAs solar cells and heterostructure bipolar transistors.


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