TITLE

Response to ‘‘Comment on ‘Evidence for Si diffusion through epitaxial NiSi2 grown on Si(111)’ ’’ [Appl. Phys. Lett. 52, 2269 (1988)]

AUTHOR(S)
Hinkel, V.; Sorba, L.; Haak, H.; Horn, K.; Braun, W.
PUB. DATE
June 1988
SOURCE
Applied Physics Letters;6/27/1988, Vol. 52 Issue 26, p2269
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Responds to comments made by F.M. d'Heurle and O. Thomas about the authors' article 'Evidence for Si diffusion through epitaxial NiSi[sub2] grown on Si(111),' which was published in a 1987 issue of 'Applied Physics Letters.' Formation mechanism of the top silicon layers; Metal atom diffusion into the silicon.
ACCESSION #
9827203

 

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