Response to ‘‘Comment on ‘Evidence for Si diffusion through epitaxial NiSi2 grown on Si(111)’ ’’ [Appl. Phys. Lett. 52, 2269 (1988)]

Hinkel, V.; Sorba, L.; Haak, H.; Horn, K.; Braun, W.
June 1988
Applied Physics Letters;6/27/1988, Vol. 52 Issue 26, p2269
Academic Journal
Responds to comments made by F.M. d'Heurle and O. Thomas about the authors' article 'Evidence for Si diffusion through epitaxial NiSi[sub2] grown on Si(111),' which was published in a 1987 issue of 'Applied Physics Letters.' Formation mechanism of the top silicon layers; Metal atom diffusion into the silicon.


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