TITLE

Measurement of the pressure dependence of the direct band gap of In0.53Ga0.47As using stimulated emission

AUTHOR(S)
People, R.; Jayaraman, A.; Wecht, K. W.; Sivco, D. L.; Cho, A. Y.
PUB. DATE
June 1988
SOURCE
Applied Physics Letters;6/20/1988, Vol. 52 Issue 25, p2124
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Stimulated emission, obtainable at high optical pumping levels, has been used to follow the pressure dependence of the Γ-band gap of molecular beam epitaxial In0.53Ga0.47As on (001)InP. Hydrostatic pressure was generated using a diamond anvil cell, and all measurements were made at room temperature. The gap varies sublinearly with pressure for P>=10 kbar, having an initial slope of 12.44 meV/kbar. The deviation from a linear behavior is largely due to nonlinearities in the equation of state at higher pressures. The deformation potential (Ξd+ (1)/(3) Ξu-a) =-(7.79±0.4)eV, for the Γ-band gap.
ACCESSION #
9827188

 

Related Articles

  • Enhancement of GaAs/InGaAs quantum well emission by disordered gold nanoparticle arrays. Gao, Hongwei; Teng, Jinghua; Chua, Soo; Xiang, Ning // Applied Physics A: Materials Science & Processing;May2014, Vol. 115 Issue 2, p487 

    Coupling effect of surface plasmon (SP) with InGaAs/GaAs QW emission is demonstrated experimentally. The SP resonance is generated by disordered arrays of Au nanodisks on the InGaAs/GaAs QW surface. More than twofold enhancement in QW PL is observed. Theoretical simulations also indicated that...

  • Independent wavelength and density control of uniform GaAs/AlGaAs quantum dots grown by infilling self-assembled nanoholes. Atkinson, P.; Zallo, E.; Schmidt, O. G. // Journal of Applied Physics;Sep2012, Vol. 112 Issue 5, p054303 

    Very low density growth of GaAs quantum dots in self-assembled nanoholes created by gallium droplet etching is demonstrated. The emission energy of the quantum dots can be accurately controlled by the GaAs deposition amount, from 1.8 to 1.6 eV, independently of the dot density which can be...

  • Effects of indium lattice hardening upon the growth and structural properties of large-diameter, semi-insulating GaAs crystals. McGuigan, S.; Thomas, R. N.; Barrett, D. L.; Hobgood, H. M.; Swanson, B. W. // Applied Physics Letters;5/19/1986, Vol. 48 Issue 20, p1377 

    The high-pressure liquid encapsulated Czochralski growth of indium lattice-hardened GaAs, from 3 kg melts, has resulted in low-dislocation, large-diameter crystals which exhibit thermally stable, semi-insulating properties. Post-growth boule annealing is found to be an effective stress-relief...

  • Indium exodiffusion in annealed GaAs:In crystals. Krawczyk, S. K.; Khoukh, A.; Olier, R.; Chabli, A.; Molva, E. // Applied Physics Letters;12/29/1986, Vol. 49 Issue 26, p1776 

    In this work, we report on the effect of annealing on the distribution of indium in the surface region of In-alloyed GaAs crystals. Auger, secondary ion mass spectroscopy, and photoluminescence were used as the analytical tools. It is shown that In migrates and piles up over a depth of several...

  • Measurement of hole velocity in n-type InGaAs. Hill, P.; Schlafer, J.; Powazinik, W.; Urban, M.; Eichen, E.; Olshansky, R. // Applied Physics Letters;5/4/1987, Vol. 50 Issue 18, p1260 

    Hole drift velocities in n-type In0.53Ga0.47As have been determined experimentally for the first time. Measured values of the frequency response of transit-time-limited InGaAs p-i-n photodiodes were fit with the theoretical response using hole velocity as the only free parameter. Measurements...

  • InP/InGaAsP buried mesa ridge laser: A new ridge laser with reduced leakage currents. Jung, H.; Schlosser, E. // Applied Physics Letters;5/29/1989, Vol. 54 Issue 22, p2171 

    We describe a new kind of InP/InGaAsP buried ridge laser—the buried mesa ridge laser. A simple calculation shows that this laser structure has considerably reduced leakage currents compared with the conventional buried ridge laser. The fabrication steps are described. The light-current...

  • Long-wavelength photodiodes based on Ga[sub 1-x]In[sub x]As[sub y]Sb[sub 1-y] with composition near the miscibility boundary. Andreev, I. A.; Kunitsyna, E. V.; Mikhailova, M. P.; Yakovlev, Yu. P. // Semiconductors;Feb99, Vol. 33 Issue 2, p216 

    The possibility of using liquid-phase epitaxy to obtain Ga[sub l - x]In[sub x]As[sub y]Sb[sub 1 - y] solid solutions isoperiodic with GaSb near the miscibility boundary is investigated. The effect of crystallographic orientation of the substrate on the composition of the solid solutions grown in...

  • Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained-layer quantum wells. Lambkin, J. D.; Dunstan, D. J.; Homewood, K. P.; Howard, L. K.; Emeny, M. T. // Applied Physics Letters;11/5/1990, Vol. 57 Issue 19, p1986 

    Photoluminescence in InGaAs/GaAs strained-layer quantum wells is strongly quenched by temperatures above 10–100 K, depending on the well width. Analysis of this dependence shows that the quenching mechanism is thermal activation of electron-hole pairs from the wells into the GaAs...

  • Effect of growth interruption time and growth temperature on the natural formation of... Ogawa, Tomoya; Akabori, Masashi // Journal of Applied Physics;1/15/2000, Vol. 87 Issue 2, p745 

    Presents information on a study which examined the effect of growth interruption time and growth temperature on the natural formation of indium-gallium arsenide/aluminum-gallium arsenide quantum disk structures by metalorganic vapor phase epitaxy. Experimental procedure; Results and discussion;...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics