Measurement of the pressure dependence of the direct band gap of In0.53Ga0.47As using stimulated emission

People, R.; Jayaraman, A.; Wecht, K. W.; Sivco, D. L.; Cho, A. Y.
June 1988
Applied Physics Letters;6/20/1988, Vol. 52 Issue 25, p2124
Academic Journal
Stimulated emission, obtainable at high optical pumping levels, has been used to follow the pressure dependence of the Γ-band gap of molecular beam epitaxial In0.53Ga0.47As on (001)InP. Hydrostatic pressure was generated using a diamond anvil cell, and all measurements were made at room temperature. The gap varies sublinearly with pressure for P>=10 kbar, having an initial slope of 12.44 meV/kbar. The deviation from a linear behavior is largely due to nonlinearities in the equation of state at higher pressures. The deformation potential (Ξd+ (1)/(3) Ξu-a) =-(7.79±0.4)eV, for the Γ-band gap.


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