TITLE

Measurement of the pressure dependence of the direct band gap of In0.53Ga0.47As using stimulated emission

AUTHOR(S)
People, R.; Jayaraman, A.; Wecht, K. W.; Sivco, D. L.; Cho, A. Y.
PUB. DATE
June 1988
SOURCE
Applied Physics Letters;6/20/1988, Vol. 52 Issue 25, p2124
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Stimulated emission, obtainable at high optical pumping levels, has been used to follow the pressure dependence of the Γ-band gap of molecular beam epitaxial In0.53Ga0.47As on (001)InP. Hydrostatic pressure was generated using a diamond anvil cell, and all measurements were made at room temperature. The gap varies sublinearly with pressure for P>=10 kbar, having an initial slope of 12.44 meV/kbar. The deviation from a linear behavior is largely due to nonlinearities in the equation of state at higher pressures. The deformation potential (Ξd+ (1)/(3) Ξu-a) =-(7.79±0.4)eV, for the Γ-band gap.
ACCESSION #
9827188

 

Related Articles

  • Enhancement of GaAs/InGaAs quantum well emission by disordered gold nanoparticle arrays. Gao, Hongwei; Teng, Jinghua; Chua, Soo; Xiang, Ning // Applied Physics A: Materials Science & Processing;May2014, Vol. 115 Issue 2, p487 

    Coupling effect of surface plasmon (SP) with InGaAs/GaAs QW emission is demonstrated experimentally. The SP resonance is generated by disordered arrays of Au nanodisks on the InGaAs/GaAs QW surface. More than twofold enhancement in QW PL is observed. Theoretical simulations also indicated that...

  • Independent wavelength and density control of uniform GaAs/AlGaAs quantum dots grown by infilling self-assembled nanoholes. Atkinson, P.; Zallo, E.; Schmidt, O. G. // Journal of Applied Physics;Sep2012, Vol. 112 Issue 5, p054303 

    Very low density growth of GaAs quantum dots in self-assembled nanoholes created by gallium droplet etching is demonstrated. The emission energy of the quantum dots can be accurately controlled by the GaAs deposition amount, from 1.8 to 1.6 eV, independently of the dot density which can be...

  • Long-wavelength photodiodes based on Ga[sub 1-x]In[sub x]As[sub y]Sb[sub 1-y] with composition near the miscibility boundary. Andreev, I. A.; Kunitsyna, E. V.; Mikhaılova, M. P.; Yakovlev, Yu. P. // Semiconductors;Feb99, Vol. 33 Issue 2, p216 

    The possibility of using liquid-phase epitaxy to obtain Ga[sub l - x]In[sub x]As[sub y]Sb[sub 1 - y] solid solutions isoperiodic with GaSb near the miscibility boundary is investigated. The effect of crystallographic orientation of the substrate on the composition of the solid solutions grown in...

  • Electrical characterization of In[sub x]Ga[sub 1--x]As/Al[sub 0.4]Ga[sub 0.6]As/GaAs. Collot, P.; Barbier, E. // Applied Physics Letters;1/28/1991, Vol. 58 Issue 4, p367 

    Investigates two pseudomorphic In[sub x]Ga[sub 1-x]As/Al[sub 0.4]Ga[sub 0.6]As/GaAs semiconductor/insulator/semiconductor heterostructures with indium mole fractions. Comparison of the heterostructures with a conventional GaAs/AlGaAs/GaAs structure by means of a current-temperature and...

  • Effects of indium lattice hardening upon the growth and structural properties of large-diameter, semi-insulating GaAs crystals. McGuigan, S.; Thomas, R. N.; Barrett, D. L.; Hobgood, H. M.; Swanson, B. W. // Applied Physics Letters;5/19/1986, Vol. 48 Issue 20, p1377 

    The high-pressure liquid encapsulated Czochralski growth of indium lattice-hardened GaAs, from 3 kg melts, has resulted in low-dislocation, large-diameter crystals which exhibit thermally stable, semi-insulating properties. Post-growth boule annealing is found to be an effective stress-relief...

  • Indium exodiffusion in annealed GaAs:In crystals. Krawczyk, S. K.; Khoukh, A.; Olier, R.; Chabli, A.; Molva, E. // Applied Physics Letters;12/29/1986, Vol. 49 Issue 26, p1776 

    In this work, we report on the effect of annealing on the distribution of indium in the surface region of In-alloyed GaAs crystals. Auger, secondary ion mass spectroscopy, and photoluminescence were used as the analytical tools. It is shown that In migrates and piles up over a depth of several...

  • Measurement of hole velocity in n-type InGaAs. Hill, P.; Schlafer, J.; Powazinik, W.; Urban, M.; Eichen, E.; Olshansky, R. // Applied Physics Letters;5/4/1987, Vol. 50 Issue 18, p1260 

    Hole drift velocities in n-type In0.53Ga0.47As have been determined experimentally for the first time. Measured values of the frequency response of transit-time-limited InGaAs p-i-n photodiodes were fit with the theoretical response using hole velocity as the only free parameter. Measurements...

  • 2 ps InGaAs photoconductors and their speed-of-response evaluation by optical pulse mixing at inherent nonlinearities. Loepfe, R.; Schaelin, A.; Melchior, H.; Blaser, M.; Jaeckel, H.; Bona, G. L. // Applied Physics Letters;6/20/1988, Vol. 52 Issue 25, p2130 

    Miniaturized In0.53Ga0.47As/InP photoconductors with nanosecond response times were integrated into broadband coplanar 50 Ω microwave structures and their response times shortened by 14 MeV Be3+-ion implants. Using Carruther’s pulse-mixing technique, which relies on the nonlinearities...

  • Influence of striations in GaAs on the activated profiles of implanted silicon. Schink, H.; Schnell, R. D. // Applied Physics Letters;8/29/1988, Vol. 53 Issue 9, p764 

    Liquid-encapsulated Czochralski-grown GaAs is known to show radial striations. In GaAs:In they can be seen by x-ray topography via fluctuations of the In concentration which cause variations in the lattice constant. Using a high spatial resolution capacitance-voltage technique we investigated...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics