TITLE

Experimental characterization of two-dimensional dopant profiles in silicon using chemical staining

AUTHOR(S)
Subrahmanyan, Ravi; Massoud, Hisham Z.; Fair, Richard B.
PUB. DATE
June 1988
SOURCE
Applied Physics Letters;6/20/1988, Vol. 52 Issue 25, p2145
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An experimental technique for the measurement of two-dimensional impurity diffusion profiles in silicon has been developed. Both the lateral and in-depth extent of dopant diffusion under a mask edge are magnified mechanically by sawing and angle lapping, and the magnified junction contour is delineated by chemical staining. The two-dimensional shape of the junction is reconstructed from the measured stained contour. A complete diffusion profile consisting of several isoconcentration contours can be obtained by measuring the junction shape on a series of samples with increasing substrate resistivities, provided the doping level in the substrate does not affect the diffusion of the impurity under study. Results of the two-dimensional diffusion of boron in silicon at 1050 °C are presented.
ACCESSION #
9827173

 

Related Articles

  • Evidence for Si diffusion through epitaxial NiSi2 grown on Si(111). Hinkel, V.; Sorba, L.; Haak, H.; Horn, K.; Braun, W. // Applied Physics Letters;5/4/1987, Vol. 50 Issue 18, p1257 

    Epitaxial nickel silicide films grown on Si(111)-(2×1) surfaces have been studied by valence and core level photoemission using synchrotron radiation. The different chemical binding states of the nickel atoms were clearly identified in the valence-band spectra, and our data demonstrate that...

  • Minority-hole diffusion length in heavily doped silicon. Wang, Chih Hsin; Misiakos, Konstantinos; Neugroschel, Arnost // Applied Physics Letters;5/29/1989, Vol. 54 Issue 22, p2233 

    The minority-hole diffusion length in heavily doped n-type silicon wafers was measured in the doping range 1018–1020 cm-3. The experimental method is based on the lateral collection of photogenerated carriers by a semi-infinite junction. Closed form expressions available for this...

  • Fast metal diffusers in Si in the presence of Si self-interstitial traps. Gossman, H.-J.; Stolk, P.A. // Applied Physics Letters;11/20/1995, Vol. 67 Issue 21, p3135 

    Investigates fast metal diffusers in silicon in the presence of silicon self-interstitial traps. Existence of nonannihilating interstitial trap; Effectiveness of using self-diffusion coefficient to exclude or prove trap-limited diffusion; Effects of proper inclusion of traps on the extracted...

  • Response to ‘‘Comment on ‘Diffusion of Si in thin CoSi2 layers’ ’’ [Appl. Phys. Lett. 55, 1804 (1989)]. Schowengerdt, F. D.; Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J. // Applied Physics Letters;10/23/1989, Vol. 55 Issue 17, p1804 

    Responds to comments made by F.M. d'Huerle on the paper 'Diffusion of Si in thin CoSi[sub 2] layers,' which appeared in a 1989 issue of the journal 'Applied Physics Letters.' Existence of Si layers above the Co atoms; Increase in Si layer thickness at temperatures far below those where pinholes...

  • Comment on ‘‘Diffusion of Si in thin CoSi2 layers’’ [Appl. Phys. Lett. 54, 1314 (1989)]. d’Heurle, F. M. // Applied Physics Letters;10/23/1989, Vol. 55 Issue 17, p1804 

    Comments on the paper 'Diffusion of Si in thin CoSi[sub 2] layers,' by F.D. Schowengerdt and colleagues, which appeared in a 1989 issue of the journal 'Applied Physics Letters.' Maintenance of the integrity of the silicide layers through the motion of Co atoms from the silicide-oxide to the...

  • Accurate measurement of the vacancy equilibrium concentration in silicon. Zimmermann, H. // Applied Physics Letters;12/9/1991, Vol. 59 Issue 24, p3133 

    Presents a procedure for measuring the vacancy equilibrium concentration of silicon. Achievement of the equilibrium concentration under very clean environment; Adaptation of the Frank-Turnball mechanism on diffusion of platinum; Employment of numerical simulations in proving validity of the...

  • Carrier-dependent hydrogen migration in hydrogenated amorphous silicon. Santos, Paulo V.; Johnson, N.M. // Applied Physics Letters;2/15/1993, Vol. 62 Issue 7, p720 

    Investigates the hydrogen diffusion in hydrogenated amorphous silicon. Use of secondary ion mass spectroscopy; Electronic nature of hydrogen diffusion; Role of electronic carrier on hydrogen diffusion; Steps in the formation of exponential diffusion tail.

  • Behavior of dopant diffusion in a silicon-on-insulator structure formed by high-dose oxygen implantation. Fahey, P.; Solmi, S. // Journal of Applied Physics;12/15/1986, Vol. 60 Issue 12, p4329 

    Presents a study which examined the behavior of dopant diffusion in a silicon-on-insulator structure formed by high-dose oxygen implantation. Comparison of the dopant diffusion to diffusion in normal bulk wafers; Nonequilibrium effects on diffusion during nitridation of an SiO[sub2] layer;...

  • A comparison of boron and phosphorus diffusion and dislocation loop growth from silicon implants... Xu, Jingwei; Krishnamoorthy, V.; Jones, Kevin S.; Law, Mark E. // Journal of Applied Physics;1/1/1997, Vol. 81 Issue 1, p107 

    Compares transient enhanced diffusion effects between boron and phosphorus of dopants in silicon. Significant enhancement of phosphorus during damage annealing; Indications of dislocation growths; Agreement between dislocation growth saturation time and phosphorus diffusion saturation.

  • The dose, energy, and time dependence of silicon self-implantation induced transient enhanced diffusion at 750 °C. Chao, H. S.; Griffin, P. B.; Plummer, J. D.; Rafferty, C. S. // Applied Physics Letters;9/30/1996, Vol. 69 Issue 14, p2113 

    The short anneal time behavior of transient enhanced diffusion of dopants in silicon is investigated experimentally using a buried boron marker layer structure and varying Si implant doses and implant energies. The diffusion behavior of the marker layer shows that the diffusivity enhancements...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics