TITLE

Experimental characterization of two-dimensional dopant profiles in silicon using chemical staining

AUTHOR(S)
Subrahmanyan, Ravi; Massoud, Hisham Z.; Fair, Richard B.
PUB. DATE
June 1988
SOURCE
Applied Physics Letters;6/20/1988, Vol. 52 Issue 25, p2145
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An experimental technique for the measurement of two-dimensional impurity diffusion profiles in silicon has been developed. Both the lateral and in-depth extent of dopant diffusion under a mask edge are magnified mechanically by sawing and angle lapping, and the magnified junction contour is delineated by chemical staining. The two-dimensional shape of the junction is reconstructed from the measured stained contour. A complete diffusion profile consisting of several isoconcentration contours can be obtained by measuring the junction shape on a series of samples with increasing substrate resistivities, provided the doping level in the substrate does not affect the diffusion of the impurity under study. Results of the two-dimensional diffusion of boron in silicon at 1050 °C are presented.
ACCESSION #
9827173

 

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