Three-dimensional integration of resonant tunneling structures for signal processing and three-state logic

Potter, Robert C.; Lakhani, Amir A.; Beyea, Dana; Hier, Harry; Hempfling, Erica; Fathimulla, Ayub
June 1988
Applied Physics Letters;6/20/1988, Vol. 52 Issue 25, p2163
Academic Journal
We have developed structures with two well-defined negative differential resistance (NDR) regions by sequentially growing two resonant tunneling devices separated by an n+ connecting layer. Devices fabricated from these structures exhibited three stable operating points for multilevel logic circuits and were used in circuits which multiplied the input signal frequency by 3 or 5. This approach can be extended to obtain more than two NDR regions by vertical integration of additional resonant tunneling structures.


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