TITLE

Depletion charge measurements by tunneling spectroscopy GaAs-GaAlAs field-effect transistors

AUTHOR(S)
Smoliner, J.; Gornik, E.; Weimann, G.
PUB. DATE
June 1988
SOURCE
Applied Physics Letters;6/20/1988, Vol. 52 Issue 25, p2136
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The subband energies on GaAs-GaAlAs field-effect transistor samples were measured by tunneling spectroscopy using a structure, where the tunneling process starts from an accumulation layer, and a conventional structure, where the electrons tunnel from a metal electrode into the two-dimensional electron gas. Self-consistent calculations were performed to determine the depletion charge from the measured subband energies. Furthermore, the influence of a backgate voltage was investigated both experimentally and theoretically. As far as we know, this is the first direct determination of the depletion charge in GaAs-GaAlAs field-effect transistor structures.
ACCESSION #
9827135

 

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