Depletion charge measurements by tunneling spectroscopy GaAs-GaAlAs field-effect transistors

Smoliner, J.; Gornik, E.; Weimann, G.
June 1988
Applied Physics Letters;6/20/1988, Vol. 52 Issue 25, p2136
Academic Journal
The subband energies on GaAs-GaAlAs field-effect transistor samples were measured by tunneling spectroscopy using a structure, where the tunneling process starts from an accumulation layer, and a conventional structure, where the electrons tunnel from a metal electrode into the two-dimensional electron gas. Self-consistent calculations were performed to determine the depletion charge from the measured subband energies. Furthermore, the influence of a backgate voltage was investigated both experimentally and theoretically. As far as we know, this is the first direct determination of the depletion charge in GaAs-GaAlAs field-effect transistor structures.


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