TITLE

InGaAsP multiple quantum well lasers with planar buried heterostructure prepared by metalorganic chemical vapor deposition

AUTHOR(S)
Ishiguro, H.; Kawabata, T.; Koike, S.
PUB. DATE
June 1988
SOURCE
Applied Physics Letters;6/20/1988, Vol. 52 Issue 25, p2099
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Planar buried heterostructure InGaAsP multiple quantum well (MQW) lasers consisting of six InGaAsP (λg =1.34 μm at room temperature) wells and five InP barriers were prepared by low-pressure metalorganic chemical vapor deposition. The threshold current was 35 mA, and the differential quantum efficiency was 45% at an emission wavelength of 1.3 μm. In the temperature range from -35 to 30 °C, the characteristic temperature was T0=57 K. No significant improvement in T0 was observed in these MQW lasers. However, stable single longitudinal mode operation could be obtained in a wide range of injection current without any mode changes. This effect was considered to be a result of gain narrowing of the MQW lasers.
ACCESSION #
9827123

 

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