TITLE

Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

AUTHOR(S)
Nouhi, A.; Radhakrishnan, G.; Katz, J.; Koliwad, K.
PUB. DATE
June 1988
SOURCE
Applied Physics Letters;6/13/1988, Vol. 52 Issue 24, p2028
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Epitaxial CdTe has been grown on both (100)GaAs/Si and (111)GaAs/Si substrates. A combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has been employed for the first time to achieve this growth: the GaAs layers are grown on Si substrates by MBE and the CdTe film is subsequently deposited on GaAs/Si by MOCVD. The grown layers have been characterized by x-ray diffraction, scanning electron microscopy, and photoluminescence.
ACCESSION #
9827118

 

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