Indium diffusion in the chemical potential gradient at an In0.53Ga0.47As/In0.52Al0.48As interface

Baird, R. J.; Potter, T. J.; Kothiyal, G. P.; Bhattacharya, P. K.
June 1988
Applied Physics Letters;6/13/1988, Vol. 52 Issue 24, p2055
Academic Journal
We have measured the distribution of group III metals at In0.53Ga0.47As/In0.52Al0.48As interfaces before and after annealing at 1085 K. We find little evidence for Al interdiffusion, but the Ga concentration profiles show some broadening on annealing. Also, the originally nearly constant In profiles develop strong modulations with near discontinuities at the original interfaces. This phenomenon is explained and modeled in terms of In diffusion in the chemical potential gradient established by the disparity of the Al and Ga mobilities and the requirement of III-V stoichiometry in the alloys.


Related Articles

  • Solubility of aluminum, gallium, and indium perchlorates in water. Pestova, O. N.; David'yan, A. G.; Myund, L. A.; Khripun, M. K. // Russian Journal of General Chemistry;Aug2011, Vol. 81 Issue 8, p1583 

    Solubility polytherms of the system M(ClO)-HO (M = Al, Ga, In) were measured. Positions of singular points and vitrification ranges were determined. Values of eutectic concentrations were compared with earlier known data on the inversion concentrations measured by the viscometry method....

  • Hydrogenation and annealing kinetics of group-III acceptors in oxidized silicon. Sah, Chih-Tang; Pan, Samuel Cheng-Sheng; Hsu, Charles Ching-Hsiang // Journal of Applied Physics;6/15/1985, Vol. 57 Issue 12, p5148 

    Presents a study which showed the density of boron, aluminum, gallium and indium acceptor versus curved during avalanche electron injection and constant-temperature thermal annealing experiments obtained from metal-oxide-silicon capacitors. Details on the avalanche electron injection (AEI)...

  • Response to “Comment on ‘Thermally stable Ir Schottky contact on AlGaN/GaN heterostructure’ ” [Appl. Phys. Lett 83, 1272 (2003)]. Chang Min Jeon, P.; Jong-Lam Lee // Applied Physics Letters;8/11/2003, Vol. 83 Issue 6, p1273 

    Presents a response to a comment on the article, 'Thermally stable Ir Schottky contact on AlGaN/GaN heterostructure,' published in a 1003 issue of the journal 'Applied Physics.' Changes in both work function and atomic composition of group-III elements using the synchrotron radiation...

  • New Class of Holographic Materials Based on CdF[sub 2] Semiconductor Crystals with Bistable Centers. I. Role of Covalence in the Formation of Bistable Centers. Onopko, D. E.; Ryskin, A. I. // Optics & Spectroscopy;Oct2000, Vol. 89 Issue 4, p519 

    Calculations of the electronic structure of In, Ga, and Al impurity centers in a CdF[sub 2] crystal in the cluster approximation using the method of scattered waves are made. The first two impurities form in additively colored crystals bistable centers having a ground two-electron (deep) state...

  • A deep level in Zn-doped InGaAlP. Nozaki, Chiharu; Ohba, Yasuo // Journal of Applied Physics;12/1/1989, Vol. 66 Issue 11, p5394 

    Presents a study which examined a deep level in zinc-doped InGaAlP using pulsed-bias transient capacitance and photocapacitance measurements. Materials and methods used; Energy depth from the valence band; Characteristics of the deep-level concentration.

  • Photoelectron spectroscopy and density functional theory of puckered ring structures of Group 13 metal-ethylenediamine. Li, Shenggang; Fuller, Jason F.; Wang, Xu; Sohnlein, Bradford R.; Bhowmik, Paragranjita; Yang, Dong-Sheng // Journal of Chemical Physics;10/22/2004, Vol. 121 Issue 16, p7692 

    The ethylenediamine (en) complexes of Al, Ga, and In atoms were prepared in laser-vaporization supersonic molecular beams and studied with pulsed field ionization zero electron kinetic energy photoelectron spectroscopy and density functional theory. Several conformers of each metal complex are...

  • The g-factor of quasi-two-dimensional electrons in InAs/InGaAs/InAlAs inserted-channels. Pakmehr, Mehdi; Khaetskii, A.; McCombe, B. D.; Bhandari, N.; Cahay, M.; Chiatti, Olivio; Fischer, S. F.; Heyn, C.; Hansen, W. // Applied Physics Letters;8/24/2015, Vol. 107 Issue 8, p1 

    We have measured the Landau-level spin-splitting of two-dimensional electrons in the composite InAs/InGaAs channels of two InAs/InGaAs/InAlAs heterostructures with different alloy compositions by magnetotransport and THz magneto-photoconductivity in magnetic fields up to 10 T. The structures...

  • Theoretical Investigation on Electron Mobility in AlInGaN/InGaN Heterostructures. Li, Yao // Physica Status Solidi (B);Mar2019, Vol. 256 Issue 3, pN.PAG 

    The dependences of electron mobility in AlInGaN/InGaN heterostructure on the barrier and channel alloy compositions and on temperature are investigated including six scattering processes: acoustic deformation potential (DP) scattering, piezoelectric field (PE) scattering, polar optical phonons...

  • Barrier layer engineering: Performance Evaluation of E-mode InGaN/AlGaN/GaN HEMT. Majumdar, Shubhankar; Das, S.; Biswas, D. // AIP Conference Proceedings;2015, Vol. 1675 Issue 1, p1 

    Impact on DC characteristics of InGaN/AlGaN/GaN HEMT due to variation in the hetero- structure parameters i.e. molar fraction of Al and thickness of AlGaN barrier layer is presented in this paper. Gate controllability over the channel is dependent on barrier layer thickness, and molar fraction...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics