Dependence of the photoreflectance of semi-insulating GaAs on temperature and pump chopping frequency

Shen, H.; Hang, Z.; Pan, S. H.; Pollak, Fred H.; Woodall, J. M.
June 1988
Applied Physics Letters;6/13/1988, Vol. 52 Issue 24, p2058
Academic Journal
The amplitude of the photoreflectance (PR) spectra of the direct gap of semi-insulating GaAs has been studied as a function of pump chopping frequency (2–4000 Hz) and temperature (25–198 °C). We have been able to deduce a temperature-dependent trap time and hence trap activation energy of 0.70±0.05 eV. Our experiment demonstrates that PR can be used as a contactless method to study deep traps in semiconductors, analogous to deep level transient spectroscopy.


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