Diffusion suppression of photolytic fragments on laser-induced chemical vapor deposition

Arai, Yoshimitsu; Yamaguchi, Satoru; Ohsaki, Takaaki
June 1988
Applied Physics Letters;6/13/1988, Vol. 52 Issue 24, p2083
Academic Journal
Diffusion suppression of Al fragments formed in a trimethylaluminum atmosphere by an ArF excimer laser during photolytic laser-induced chemical vapor deposition is investigated. Heavier molecular weight base gas such as Ar is found to act as a diffusion buffer which suppresses the diffusion of Al radicals and atoms. Furthermore, biasing the upper electrode positive relative to the stage is also effective in suppressing photolytic fragment diffusion.


Related Articles

  • Atomic layer growth of silicon by excimer laser induced cryogenic chemical vapor deposition. Tanaka, T.; Fukuda, T.; Nagasawa, Y.; Miyazaki, S.; Hirose, M. // Applied Physics Letters;4/9/1990, Vol. 56 Issue 15, p1445 

    Polycrystalline silicon has been grown by ArF excimer laser (193 nm) induced dissociation of Si2H6 adsorbed on a quartz substrate cooled to -69 °C. Silicon atomic layer growth has also been achieved by controlling the Si2H6 adsorbed layer thickness. It is found that the chemical reactivity of...

  • Excimer laser initiated chemical vapor deposition of tungsten films on silicon dioxide. Shintani, Akira; Tsuzuku, Susumu; Nishitani, Eisuke; Nakatani, Mitsuo // Journal of Applied Physics;3/15/1987, Vol. 61 Issue 6, p2365 

    Presents a study which focused on the initiation of excimer laser initiated chemical vapor deposition of tungsten films on silicon dioxide. Materials and methods; Results and discussion; Interpretation of the reaction mechanism.

  • Metallization of poly(4-methyl-1-pentene) microcellular foam. Perry, W. Lee; Dye, Robert C. // Applied Physics Letters;1/16/1995, Vol. 66 Issue 3, p314 

    Examines the metallization of low density microcellular foam from poly(4-methyl-1-penten) by laser-induced chemical vapor deposition (LICVD). Use of KrF excimer laser radiation to photolytically decompose molybdenum hexacarbonyl; Confirmation of deposition at 100 micrometers; Significance of...

  • Sodium passivation dependence on phosphorus concentration in tetraethylorthosilicate plasma-enhanced chemical vapor deposited phosphosilicate glasses. Cramer, J. Kalpathy; Murarka, S. P.; Srikrishnan, K. V.; Patrick, W. // Journal of Applied Physics;3/1/1993, Vol. 73 Issue 5, p2458 

    Presents a study which examined the effectiveness of tetraethylorthosilicate plasma-enhanced chemical vapor deposited phosphosilicate glasses, as the barrier to sodium diffusion, as a function of the phosphorous concentration. Information on the silicon integrated circuit technology; Materials...

  • Laser-induced chemical vapor deposition of aluminum from trimethylamine alane. Popov, C.; Ivanov, B.; Shanov, V. // Journal of Applied Physics;4/1/1994, Vol. 75 Issue 7, p3687 

    Presents a study which achieved a maskless patterning of aluminum by using visible light from a copper bromide vapor laser for pyrolytic decomposition of trimethylamine alane on silicon monocrystalline wafer. Procedures applied for the analysis of the resultant stripes; Description of the...

  • Reinvestigation of the carbon films prepared by ArF excimer laser-induced chemical vapor deposition. Kitahama, Katsuki // Applied Physics Letters;11/7/1988, Vol. 53 Issue 19, p1812 

    It has already been reported by the authors [K. Kitahama, K. Hirata, H. Nakamatsu, S. Kawai, N. Fujimori, T. Imai, H. Yoshino, and A. Doi, Appl. Phys. Lett. 49, 634 (1986)] that the formation of diamond was confirmed in an ArF excimer laser-induced chemical vapor deposition experiment using...

  • Low-temperature (600–650 °C) silicon epitaxy by excimer laser-assisted chemical vapor deposition. Yamada, A.; Satoh, A.; Konagai, M.; Takahashi, K. // Journal of Applied Physics;6/1/1989, Vol. 65 Issue 11, p4268 

    Presents a study which reported silicon (Si) epitaxial growth using an excimer laser to reduce the growth temperature. Description of the schematic experimental setup used for laser-chemical vapor deposition (CVD); Dependence of the growth rate on the substrate temperature; Variation of...

  • Phase-graded deposition of diamond-like carbon on nanotips by near-field induced chemical vapor deposition. Shi, J.; Lu, Y. F.; Chen, X. Y.; Cherukuri, R. S.; Mendu, K. K.; Wang, H.; Batta, N. // Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p131918 

    Diamond-like carbon (DLC) films were deposited on tungsten (W) tips under the KrF excimer laser in a laser chemical vapor deposition (LCVD) chamber. Raman spectroscopy showed that the deposited DLC films were phase-graded along the tips from the apexes. The DLC films were more diamondlike at or...

  • Effects of plasma and/or 193 nm excimer-laser irradiation in chemical-vapor deposition of boron films from B2H6+He. Komatsu, Shojiro; Kasamatsu, Mitsuo; Yamada, Kawakatsu; Moriyoshi, Yusuke // Journal of Applied Physics;6/1/1992, Vol. 71 Issue 11, p5654 

    Presents a study which examined the effects of plasma and/or excimer laser irradiation in chemical vapor deposition of boron films from boron[sub2]hydrogen[sub6]+helium. Experimental procedure; Results and discussion; Precursors predicted by modified neglect of diatomic overlap calculations.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics