Diagnostics of silane and germane radio frequency plasmas by coherent anti-Stokes Raman spectroscopy

Perry, Joseph W.; Shing, Y. H.; Allevato, C. E.
June 1988
Applied Physics Letters;6/13/1988, Vol. 52 Issue 24, p2022
Academic Journal
In situ plasma diagnostics using coherent anti-Stokes Raman spectroscopy have shown different dissociation characteristics for GeH4 and SiH4 in radio frequency (rf) plasma-enhanced chemical vapor deposition of amorphous silicon germanium alloy (a-SiGe:H) thin films. The GeH4 dissociation rate in rf plasmas is a factor of about 3 larger than that of SiH4. Plasma diagnostics have revealed that the hydrogen dilution of the SiH4 and GeH4 mixed plasma plays a critical role in suppressing the gas phase polymerization and enhancing the GeH4 dissociation.


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