TITLE

Realization of high mobility in inverted AlxGa1-xAs/GaAs heterojunctions

AUTHOR(S)
Cho, N. M.; Kim, D. J.; Madhukar, A.; Newman, P. G.; Smith, D. D.; Aucoin, T.; Iafrate, G. J.
PUB. DATE
June 1988
SOURCE
Applied Physics Letters;6/13/1988, Vol. 52 Issue 24, p2037
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report reproducible realization of GaAs/Al0.25 Ga0.75 As(100) inverted heterojunctions with liquid-nitrogen electron mobilities in excess of 105 cm2 /(V s). This is made possible through use of reflection high-energy electron-diffraction (RHEED) intensity dynamics determined optimized growth conditions, but without the use of short-period superlattices as buffers or spacer layers.
ACCESSION #
9827057

 

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