Band bending and interface states for metals on GaAs

Viturro, R. E.; Shaw, J. L.; Mailhiot, C.; Brillson, L. J.; Tache, N.; McKinley, J.; Margaritondo, G.; Woodall, J. M.; Kirchner, P. D.; Pettit, G. D.; Wright, S. L.
June 1988
Applied Physics Letters;6/13/1988, Vol. 52 Issue 24, p2052
Academic Journal
We have used soft x-ray photoemission and optical emission spectroscopies to observe a broad range of Fermi level stabilization energies at metal interfaces with GaAs(100) surfaces grown by molecular beam epitaxy (MBE). The observed metal- and As-related interface cathodoluminescence plus orders-of-magnitude differences in bulk-defect-related photoluminescence between melt- versus MBE-grown GaAs suggest a role of bulk crystal growth and processing in controlling Schottky barrier formation.


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