TITLE

Real-time measurements of plasma/surface interaction by plasma-amplified photoelectron detection

AUTHOR(S)
Selwyn, G. S.; Ai, B. D.; Singh, J.
PUB. DATE
June 1988
SOURCE
Applied Physics Letters;6/6/1988, Vol. 52 Issue 23, p1953
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new method, based on the photoelectric effect, is described for real-time, in situ monitoring of metal or semiconductor surfaces during plasma exposure. As an example of the application of this technique, the effect of both sputter and reactive gas plasma exposure is studied for graphite, silicon, and aluminum surfaces. Results are consistent with the formation of a surface-passivating layer of fluoride on aluminum and penetration of fluorine into the silicon bulk during exposure to the CF4+Ar etching plasma. An application of this technique for endpoint detection monitoring is described.
ACCESSION #
9827038

 

Related Articles

  • Effect of substrate conditions on the plasma beam deposition of amorphous hydrogenated carbon. Gielen, J.W.A.M.; Kessels, W.M.M.; van de Sanden, M. C. M.; Schram, D. C. // Journal of Applied Physics;9/1/1997, Vol. 82 Issue 5, p2643 

    Studies the effect of substrate conditions performed for the plasma beam deposition of amorphous hydrogenated carbon from an expanding thermal argon/acetylene plasma on glass and crystalline silicon. Plasma settings; Creation and destruction of active sites; Holder's yoke temperature and...

  • Optical parametric amplification in the magnetoplasma in semiconductors. Iida, Takashi; Mizushima, Yoshihiko // Journal of Applied Physics;1/1/1995, Vol. 77 Issue 1, p218 

    Studies the optical parametric amplification in the magnetoplasma in semiconductors. Nonlinear parametric interaction in the magnetoplasma in a semiconductor; Discussion of the optical parametric conversion and the second-harmonic generations; Magnetoplasma instability in a semiconductor.

  • Monitoring plasma damage: A real-time, noncontact approach. Hoff, A.M.; Esry, T.C. // Solid State Technology;Jul96, Vol. 39 Issue 7, p139 

    Reports on the results obtained while using a new monitoring approach for real-time and noncontact diagnostics of plasma damage at two independent semiconductor wafer-fab locations. Generation of whole-wafer maps; Modes of plasma damage; Measuring charge effects; Surface photovoltage measurement.

  • Semiconductor bridge: A plasma generator for the ignition of explosives. Benson, D. A.; Larsen, M. E.; Renlund, A. M.; Trott, W. M.; Bickes, R. W. // Journal of Applied Physics;9/1/1987, Vol. 62 Issue 5, p1622 

    Describes a method for igniting explosive materials using a semiconductor bridge (SCB). Functionality of SCB devices; Discussion on SCB vaporization process and plasma formation; Details of the experimental techniques used; Characteristics of an SCB.

  • Highly selective etching for polysilicon and etch-induced damage to gate oxide with halogen-bearing electron-cyclotron-resonance plasma. Chang, Kow-Ming; Yeh, Ta-Hsun; Deng, I-Chung; Lin, Horng-Chih // Journal of Applied Physics;9/1/1996, Vol. 80 Issue 5, p3048 

    Discusses a study which investigated polysilicon etching with three-halogen bearing plasmas in an electron-cyclotron-resonance reactor. Review of related literature; Methodology; Findings.

  • Profile control in BF[sub3] plasma doping. Kwok, Dixon T. K.; Chu, Paul K.; Chan, Chung // Journal of Applied Physics;9/15/2000, Vol. 88 Issue 6, p3198 

    Demonstrates the use of non-ideal voltage pulse shape in achieving advantageous doping profiles that are difficult to obtain by beam-line doping (BD). Derivation of the ion energy distributions for different sample voltage pulse shapes for BF[sub 3] plasma doping.

  • Incidence angle effect of a hydrogen plasma beam for the cleaning of semiconductor surfaces. Suemune, I.; Kunitsugu, Y.; Kan, Y.; Yamanishi, M. // Applied Physics Letters;8/21/1989, Vol. 55 Issue 8, p760 

    Incidence angle effect of a hydrogen plasma beam with an ion energy of about 20 eV was observed in a cleaning process for GaAs and Si surfaces for the first time. An atomically flat (001) GaAs substrate surface which was observed by clear Laue spots was prepared with a glancing angle of...

  • Transitory switching-on of microplasmas at subthreshold voltages. Dobrovol’skiı, V. N.; Pal’tsev, I. E.; Romanov, A. V. // Semiconductors;Apr97, Vol. 31 Issue 4, p431 

    The kinetics of the establishment of a current through a p-n junction with microplasmas, upon application to the junction of a voltage less than the threshold voltage for switching-on of microplasmas under stationary conditions, has been investigated. A transitory switching-on of microplasmas...

  • Plasma doping: Progress and potential. Chu, P. K.; Felch, S. B. // Solid State Technology;Sep99, Vol. 42 Issue 9, p55 

    Provides information on the status of plasma doping (PD), the device data and discusses process and equipment issues in semiconductor industry. How PD can be implemented; Advantages of PD; How the simplest component of a dosimetry system for PD can be accomplished.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics