Production of a low-pressure processing plasma with ion beam injection for thin-film preparation

Fujita, Hiroharu; Yagura, Shinya
June 1988
Applied Physics Letters;6/6/1988, Vol. 52 Issue 23, p1956
Academic Journal
A low-pressure processing plasma production with an ion beam injection is presented by applying microwave and rf discharges in a low-pressure gas for thin-film preparation. Electrostatic ion energy analyzer and emissive probe techniques are used in the plasma of a nonreactive gas to get plasma characteristics. The measurement reveals that an energy of ion beam injected into a reactor is controllable by adjusting a bias potential applied between the two plasmas, and electric fields at the steady state are affected by a configuration of a magnetic field applied for an enhancement of a microwave plasma production.


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