Oval defects in Ga1-xAlxAs molecular beam epitaxy layers: A Raman scattering and photoluminescence combined study

Sapriel, J.; Chavignon, J.; Alexandre, F.
June 1988
Applied Physics Letters;6/6/1988, Vol. 52 Issue 23, p1970
Academic Journal
Oval defects in Ga1-xAlxAs molecular beam epitaxy layers are characterized by spatially resolved Raman and photoluminescence studies performed at room temperature with a Raman microprobe. Changes in the crystallographic orientation and chemical composition are evidenced by Raman scattering. The modification of the Ga concentration which occurs inside the oval defect is confirmed by photoluminescence investigation.


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