TITLE

Oval defects in Ga1-xAlxAs molecular beam epitaxy layers: A Raman scattering and photoluminescence combined study

AUTHOR(S)
Sapriel, J.; Chavignon, J.; Alexandre, F.
PUB. DATE
June 1988
SOURCE
Applied Physics Letters;6/6/1988, Vol. 52 Issue 23, p1970
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Oval defects in Ga1-xAlxAs molecular beam epitaxy layers are characterized by spatially resolved Raman and photoluminescence studies performed at room temperature with a Raman microprobe. Changes in the crystallographic orientation and chemical composition are evidenced by Raman scattering. The modification of the Ga concentration which occurs inside the oval defect is confirmed by photoluminescence investigation.
ACCESSION #
9827005

 

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