TITLE

Charge state controlled short- and long-range defect motions in GaAs

AUTHOR(S)
Kamada, H.; Ando, K.
PUB. DATE
June 1988
SOURCE
Applied Physics Letters;6/6/1988, Vol. 52 Issue 23, p1973
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the charge state dependent annealing reactions for a defect (H2, 0.4 eV) in p-type GaAs following room-temperature electron irradiation. Using deep level transient spectroscopy, it is shown that one of two absolutely different defect reaction branches is chosen depending on the junction bias condition. The ranges of defect motion involved in these two reactions are markedly different: When the H2 center is emptied of hole it disappears near room temperature by several defect jumps to the near neighbor sites, whereas when it is occupied with hole it annihilates at 370–380 K by long-range defect motion. The observed defect motions are well described by the simple charge state effect upon the defect which has two distinct reaction branches.
ACCESSION #
9827003

 

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