Charge state controlled short- and long-range defect motions in GaAs

Kamada, H.; Ando, K.
June 1988
Applied Physics Letters;6/6/1988, Vol. 52 Issue 23, p1973
Academic Journal
We report the charge state dependent annealing reactions for a defect (H2, 0.4 eV) in p-type GaAs following room-temperature electron irradiation. Using deep level transient spectroscopy, it is shown that one of two absolutely different defect reaction branches is chosen depending on the junction bias condition. The ranges of defect motion involved in these two reactions are markedly different: When the H2 center is emptied of hole it disappears near room temperature by several defect jumps to the near neighbor sites, whereas when it is occupied with hole it annihilates at 370–380 K by long-range defect motion. The observed defect motions are well described by the simple charge state effect upon the defect which has two distinct reaction branches.


Related Articles

  • Electron irradiation of GaAs: Improvement of transport properties and observation of DX-like centers at ambient pressure. Ghamlouch, H.; Aubin, M.; Carlone, C.; Khanna, S. M. // Journal of Applied Physics;10/1/1993, Vol. 74 Issue 7, p4357 

    Examines epitaxial n-type gallium arsenide samples before and after irradiation with 7 MeV electrons. Improvement of transport properties and observation of DX-like centers at ambient pressure; Defects in gallium arsenide due to irradiation with energetic electrons; Radiation effects in gallium...

  • Radiation resistance of compound semiconductor solar cells. Yamaguchi, Masafumi // Journal of Applied Physics;8/1/1995, Vol. 78 Issue 3, p1476 

    Features a study that determined and compared 1-megaelectronvolt electron irradiation effects on molecular beam epitaxy-grown aluminum-gallium arsenide and indium-gallium arsenide solar cells. Comparison of the effects with previous results for radiation damage on indium-phosphorus and gallium...

  • Carrier removal and changes in electrical properties of neutron irradiated GaAs. Williams, J. G.; Patel, J. U.; Ougouag, A. M.; Yang, S.-Y. // Journal of Applied Physics;11/1/1991, Vol. 70 Issue 9, p4931 

    Presents a study which examined the changes in electrical properties of n-gallium arsenide (GaAs) as a result of irradiations with fast neutrons. Importance of the experimental results on irradiations of GaAs in different neutron spectra; Radiation induced change in carrier concentration; Shift...

  • Comparison between optical techniques for the measurement of the surface electric field in (100) oriented GaAs. Yang, Z.; Chen, Y. H.; Wong, Yuqi // Applied Physics Letters;9/14/1998, Vol. 73 Issue 11 

    Three optical spectroscopic techniques commonly used for the measurement of the surface electric field (SEF) of semiconductors, namely photoreflectance (PR) near the E[sub 0] energy and near the E[sub 1] energy, and the linear electro-optic (LEO) effect of reflectance difference spectroscopy...

  • Photoluminescence and photoluminescence excitation spectroscopy in a magnetic field for GaAs grown on a Si substrate. Zemon, S.; Lee, J.; Lambert, G. // Journal of Applied Physics;6/1/1989, Vol. 65 Issue 11, p4382 

    Presents information on a study which discussed photoluminescence (PL) and PL excitation (PLE) spectroscopy in an applied magnetic field for gallium arsenide (GaAs) grown directly on a silicon substrate by organometallic vapor-phase epitaxy. Interband transitions; Analysis of PLE features not...

  • Photoreflectance study of hole-subband structures in GaAs/InxAl1-xAs strained-layer superlattices. Nakayama, Masaaki; Doguchi, Tomonori; Nishimura, Hitoshi // Journal of Applied Physics;9/15/1992, Vol. 72 Issue 6, p2372 

    Presents a study that performed photoreflectance measurements of the exciton transitions associated with gallium-arsenic strained-layer superlattices with gallium-arsenic substrates. Information on strained-layer superlattices and quantum wells; Use of photoreflectance spectroscopy; Theoretical...

  • Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters. Brunkov, P. N.; Chaldyshev, V. V.; Bert, N. A.; Suvorova, A. A.; Konnikov, S. G.; Chernigovskiı, A. V.; Preobrazhenskiı, V. V.; Putyato, M. A.; Semyagin, B. R. // Semiconductors;Oct98, Vol. 32 Issue 10, p1044 

    Capacitance spectroscopy was used to investigate the properties of Au/GaAs Schottky barriers in structures in which a thin layer of gallium arsenide grown at low temperature (LT-GaAs) and containing As clusters was sandwiched between two uniformly copper-doped layers of n-GaAs grown at standard...

  • Deep Levels in the Band Gap of GaN Layers Irradiated with Protons. Sobolev, M. M.; Sobolev, N. A.; Usikov, A. S.; Shmidt, N. M.; Yakimenko, A. N.; Gusinskiı, G. M.; Naıdenov, V. O. // Semiconductors;Dec2002, Vol. 36 Issue 12, p1352 

    Deep-level transient spectroscopy was used to study the parameters of deep levels in the band gap of epitaxial n-GaN layers after irradiaton of the Schottky barriers with 1-MeV protons to a dose of 10[sup 12] cm[sup -2]. A deep level EP1 with an activation energy of 0.085 eV was introduced by...

  • Wavelength modulation absorption spectroscopy of deep levels in semi-insulating GaAs. Eetemadi, S. M.; Braunstein, R. // Journal of Applied Physics;9/15/1985, Vol. 58 Issue 6, p2217 

    Presents a study which used wavelength modulation absorption spectroscopy of deep levels in semi-insulating gallium arsenide. Method of the study; Results and discussion; Conclusion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics