Heteroepitaxy of GaAs on Si: The effect of in situ thermal annealing under AsH3

Freundlich, A.; Grenet, J. C.; Neu, G.; Leycuras, A.; Vèrié, C.
June 1988
Applied Physics Letters;6/6/1988, Vol. 52 Issue 23, p1976
Academic Journal
This letter shows that an in situ thermal annealing step in AsH3/H2 during the metalorganic vapor phase epitaxy of GaAs on Si(001) improves the crystalline quality. The dislocation density is reduced (below 107 cm-2) without affecting the Si diffusion across the heterointerface or the strain level in the epilayer. The nature of the various near-band-gap recombinations present in the unannealed and annealed samples is discussed in light of selective photoluminescence experiments.


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