Optically controlled GaAs/AlAs multiple quantum well modulators employing integrated dielectric reflectors

Kowalsky, W.; Hackbarth, Th.; Ebeling, K. J.
June 1988
Applied Physics Letters;6/6/1988, Vol. 52 Issue 23, p1933
Academic Journal
We investigate all-optical switching in GaAs/AlAs multiple quantum well devices with integrated dielectric reflector. A 7 mW control beam at λc=790 nm wavelength produces a 15% reflection change for a test beam at λt=858 nm which is close to the lowest energy transition in the quantum wells (λ=868 nm). Switching dynamics are shown to be limited by excess carrier lifetimes of τ≊4 ns corresponding to a 3 dB frequency of 70 MHz. A basic analysis in terms of carrier-induced absorption change by dynamic band filling provides a good description of the experiments.


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