Large-numerical-aperture InP lenslets by mass transport

Liau, Z. L.; Diadiuk, V.; Walpole, J. N.; Mull, D. E.
May 1988
Applied Physics Letters;5/30/1988, Vol. 52 Issue 22, p1859
Academic Journal
Lenslets with diameters up to 130 μm and numerical apertures of 0.39–0.75 have been formed in InP substrates by using mass transport to smooth out chemically etched multilevel mesa structures. The lenslets show a smooth surface with an accurately controlled profile (i.e., curvatures) and are capable of forming clear images. Some lenslets (with a diameter of approximately 67 μm) have been used to collimate the output of a buried-heterostructure diode laser (of 1.3 μm wavelength) and resulted in a nearly diffraction-limited beam divergence of 1.4°.


Related Articles

  • Reduced phosphorus loss from InP surface during hydrogen plasma treatment. Balasubramanian, Sathya; Kumar, Vikram // Applied Physics Letters;3/28/1994, Vol. 64 Issue 13, p1696 

    Proposes a method for reducing phosphorus (P) loss from the indium phosphide (InP) surface during hydrogen (H) plasma treatment. Suppression of P loss using a sacrificial InP wafer; Reduction of P vacancy related transitions; Use of InP wafer in providing a P overpressure during H plasma treatment.

  • Chemical, structural, and electronic properties of sulfur-passivated InP(001) (2x1) surfaces.... Gallet, D.; Hollinger, G. // Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p982 

    Examines the chemical, structural and electronic properties of (NH[sub 4])[sub 2]S[sub x]-treated indium phosphide (001) surfaces. Observation on the (2x1) surface reconstruction of substrates; Factors attributing the formation of InP[sub 1-x]S[sub x] pseudomorphic overlayer; Association...

  • Effect of charge carriers on the barrier height for vacancy formation on InP(110) surfaces. Semmler, U.; Ebert, Ph.; Urban, K. // Applied Physics Letters;7/3/2000, Vol. 77 Issue 1 

    We determine the energy barrier height for the formation of positively charged phosphorus vacancies in InP(110) surfaces using the rate of formation of vacancies measured directly from scanning tunneling microscope images. We found a barrier height in the range of 1.15-1.21 eV. The barrier...

  • Formation of self-assembled InP islands on a GaInP/GaAs(311)A surface. Reaves, C. M.; Pelzel, R. I.; Hsueh, G. C.; Weinberg, W. H.; DenBaars, S. P. // Applied Physics Letters;12/16/1996, Vol. 69 Issue 25, p3878 

    The coherent Stranski–Krastanov growth mode is used to create selfassembled InP islands on GaInP/GaAs(311)A surfaces. The resulting islands on (311)A surfaces have a base width distribution peaked in the range of 600–800 A˚ in contrast to a distribution peaked at 1200 A˚ for...

  • Influence of sol-gel SiO2/TiO2 protective coatings on the optical and thermal properties of nickel-phosphorus selective surfaces. Papini, Marie // Journal of Applied Physics;7/15/1991, Vol. 70 Issue 2, p777 

    Presents a study that investigated the influence of a sol-gel coating on the optical and thermal properties of an electroless acid-etched nickel-phosphorus spectrally selective surface. Experimental procedures; Description of the sol-gel process; Results.

  • S-passivated InP (100)-(1X1) surface prepared by a wet chemical process. Tao, Y.; Yelon, A.; Sacher, E.; Lu, Z.H.; Graham, M.J. // Applied Physics Letters;5/25/1992, Vol. 60 Issue 21, p2669 

    Examines the achievement of a stable crystalline sulfur-passivated indium phosphide(100) surface. Exhibition of the (1 by 1) diffraction pattern; Termination of the surface with a monolayer of sulfur; Formation of the bridge bonds to indium.

  • Growth-temperature-dependent role of In(4x1) surface phase for the heteroepitaxy of InSb on Si(111). Rao, B. V.; Gruznev, D. // Journal of Applied Physics;1/15/2000, Vol. 87 Issue 2, p724 

    Presents information on a study which investigated the direct growth of indium-antimony (InSb) on a silicon(111) surface and in silicon (111)-In(4x1) surface phases. Experimental details; Results and discussion; Conclusions.

  • Indium supply from triisopropylindium onto a GaAs(001) surface at room temperature. Kuramochi, H.; Cui, J.; Ohtake, A.; Ozeki, M.; Kishida, M.; Uchida, H.; Akinaga, H. // Applied Physics Letters;11/18/2002, Vol. 81 Issue 21, p4058 

    The adsorbates derived from triisopropylindium (TIPIn) on a GaAs(001)-2×4 surface were studied by scanning tunneling microscopy and spectroscopy. TIPIn was adsorbed on a GaAs(001)-2×4 surface dissociatively at room temperature, the characteristic spectrum was detected from each adsorbate...

  • Deposition of the reactive metals Al and In onto sputtered and cleaved Hg1-xCdxTe surfaces. Davis, G. D.; Beck, W. A.; Niles, D. W.; Colavita, E.; Margaritondo, G. // Journal of Applied Physics;11/1/1986, Vol. 60 Issue 9, p3150 

    Presents a study which examined the interactions of the reactive metals aluminum (Al) and indium (In) in cleaved and sputtered p-type HgCdTe surfaces. Significance of the use of cleaved surfaces; Experimetal results; Deposition of Al and In.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics