Strain relaxation in low lattice mismatch epitaxy of CdTe/Cd0.97Zn0.03Te (001) by channeling

Chami, A. C.; Ligeon, E.; Danielou, R.; Fontenille, J.; Lentz, G.; Magnea, N.; Mariette, H.
May 1988
Applied Physics Letters;5/30/1988, Vol. 52 Issue 22, p1874
Academic Journal
A measurement of the misfit dislocation density at the CdTe(001)/Cd0.97Zn0.03Te (001) interface has been obtained by channeling. This method allows an accurate determination of the critical thickness (390 nm) and appears sensitive for misfit dislocation density determination in systems with lattice mismatch as low as Δa/a[bar_over_tilde:_approx._equal_to]3×10-4. The formation energy of misfit dislocations is estimated to be about 10-8 J/m.


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