TITLE

Capture of electrons and holes in quantum wells

AUTHOR(S)
Deveaud, Benoit; Shah, Jagdeep; Damen, T. C.; Tsang, W. T.
PUB. DATE
May 1988
SOURCE
Applied Physics Letters;5/30/1988, Vol. 52 Issue 22, p1886
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The capture of electrons and holes by quantum wells in multiple quantum well samples of InGaAs/InP is investigated using subpicosecond luminescence spectroscopy. For samples with thin barriers, quantum capture or carrier thermalization dominates. For thicker barriers (>500 Å), transport of carriers to the well dominates. We show that quantum capture time is <0.3 ps for holes and <1 ps for electrons. No significant dependence on well thickness is observed. Finally, Coulomb interaction between electrons and holes is shown to ‘‘trap’’ the electrons in unbound states in InGaAs before they are captured by the well.
ACCESSION #
9826972

 

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