Stacking-fault-induced defect creation in SiO2 on Si(100)

Liehr, M.; Bronner, G. B.; Lewis, J. E.
May 1988
Applied Physics Letters;5/30/1988, Vol. 52 Issue 22, p1892
Academic Journal
Decomposition of SiO2 films on Si(100) during ultrahigh-vacuum anneal has been shown previously to be preceded, at low anneal temperatures, by electrical defect creation in metal-oxide-semiconductor structures. In this letter, the presence of stacking faults in a Si substrate is shown to be related to enhanced oxide decomposition during high-temperature anneal. Decomposition is enhanced because of the creation of a larger number of nucleation centers for the formation of volatile SiO. These nucleation centers are the result of the metals gettered in the stacking faults close to the SiO2/Si interface.


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