Bi-Sr-Ca-Cu-O superconductor system with critical temperatures of 80 and 107 K

Kugimiya, K.; Kawashima, S.; Inoue, O.; Adachi, S.
May 1988
Applied Physics Letters;5/30/1988, Vol. 52 Issue 22, p1895
Academic Journal
Critical temperatures (Tc) of 80 and 107 K are confirmed by resistivity and inductance measurements and also by the Meissner effect. X-ray/electron diffraction and electron microscopy analyses on a single phase material of 80 K show that its structure is orthorhombic with a unit cell of a=5.407 Ã…, b=27.011 Ã…, c= 30.588 Ã… composed of a pseudotetragonal cell of a=b=5.41 Ã…. The pseudotetragonal cell size and cleavage behavior to very thin flakes strongly indicate that the oxide is basically a lamellar oxide of the Aurivillius phase type, i.e., a stacked layer structure of (Bi2O2)2+ sheets and distorted perovskite cell sheets.


Related Articles

  • Growth of thin films of TiN on MgO(100) monitored by high-pressure RHEED. Pryds, N.; Cockburn, D.; Rodrigo, K.; Rasmussen, I.; Knudsen, J.; Schou, J. // Applied Physics A: Materials Science & Processing;Nov2008, Vol. 93 Issue 3, p705 

    Reflection high-energy electron diffraction (RHEED) operated at high pressure has been used to monitor the initial growth of titanium nitride (TiN) thin films on single-crystal (100) MgO substrates by pulsed laser deposition (PLD). This is the first RHEED study where the growth of TiN films is...

  • Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films formed by rapid thermal annealing. Takamura, Yota; Sakurai, Takuya; Nakane, Ryosho; Shuto, Yusuke; Sugahara, Satoshi // Journal of Applied Physics;Apr2011, Vol. 109 Issue 7, p07B768 

    The authors demonstrated that a full-Heusler Co2FeGe (CFG) alloy thin film was epitaxially grown by rapid-thermal-annealing-induced germanidation of an Fe/Co/pseudo-Ge(001)-on-insulator (GOI) multilayer formed on a Si-on-insulator (SOI) substrate. X-ray diffraction (XRD) measurements with...

  • Bilayer thickness estimations with “poor” diffraction data. Rappolt, Michael // Journal of Applied Physics;Apr2010, Vol. 107 Issue 8, p084701 

    The lamellar fluid phase (smectic A) is the biologically most relevant membrane structure and is extensively studied by x-ray (neutron) diffraction. However, either due to experimental limitations or due to lattice disorder bilayer diffraction pattern display often not more than 2–3...

  • Structural, electrical transport, magnetization, and 1/f noise studies in 200 MeV Ag ion irradiated La0.7Ce0.3MnO3 thin films. Kumar, Ravi; Choudhary, R. J.; Patil, S. I.; Husain, Shahid; Srivastava, J. P.; Sanyal, S. P.; Lofland, S. E. // Journal of Applied Physics;12/15/2004, Vol. 96 Issue 12, p7383 

    The effect of 200 MeV Ag ion irradiation on structural, electrical transport, magnetization, and low-frequency conduction noise properties of electron-doped La0.7Ce0.3MnO3 thin films have been investigated. The as-grown thin films show c-axis epitaxial structure along with a small amount of...

  • Formation of a reacted layer at the barrierless Cu(WN)/Si interface. Chu, J. P.; Lin, C. H. // Applied Physics Letters;11/21/2005, Vol. 87 Issue 21, p211902 

    This letter reports the formation of a reacted layer between Cu film and barrierless Si substrate during annealing. The Cu films with a minor WN phase are deposited by reactive cosputtering of Cu and W in an Ar/N2 mixture gas. After annealing at 530 °C for 1 h, a ∼200-nm-thick reacted...

  • Al2O3/NbAlO/Al2O3 sandwich gate dielectric film on InP. Xinhong Cheng; Dapeng Xu; Qing-Qing Sun; Dawei He; Zhongjian Wang; Yuehui Yu; David Wei Zhang; Qingtai Zhao // Applied Physics Letters;1/11/2010, Vol. 96 Issue 2, p022904 

    Al2O3/NbAlO/Al2O3 sandwich dielectric films were grown on InP substrate and annealed. X-ray reflectivity measurements suggested that 1.0 nm interfacial layer existed at InP interface, x-ray diffraction and high resolution transmission electron microscopy indicated the films were crystallized....

  • Surface kinetics and thermal instability of N-face InN grown by plasma-assisted molecular beam epitaxy. Koblmüller, G.; Gallinat, C. S.; Speck, J. S. // Journal of Applied Physics;4/15/2007, Vol. 101 Issue 8, p083516 

    The role of thermal instability and In surface coverages on the growth kinetics has been investigated for N-face InN films grown by plasma-assisted molecular beam epitaxy. Film thickness analysis using scanning electron microscopy combined with In desorption measurements by quadrupole mass...

  • Particles impeding films discovered.  // Chemical Business;May96, Vol. 9 Issue 10, p24 

    Reports on the discovery of particles that may reduce the efficiency of certain light sensitive films. Use of a specially constructed instrument system by researchers at the US National Institute of Standards and Technology and the University of Colorado at Boulder to create images of the...

  • Evolution of dislocation structure in the heat affected zone of a nickel-based single crystal. Barabash, O. M.; Horton, J. A.; Babu, S. S.; Vitek, J. M.; David, S. A.; Park, J. W.; Ice, G. F.; Barabash, R. I. // Journal of Applied Physics;10/1/2004, Vol. 96 Issue 7, p3673 

    Using polychromatic microbeam synchrotron diffraction together with electron and optical microscopy, we studied dislocation structure changes of Ni—based single crystal superalloy during impulse heating up to the melting temperature. It is shown that the distribution of the thermal...

  • ZnO quantum particle thin films fabricated by electrophoretic deposition. Wong, Eva M.; Searson, Peter C. // Applied Physics Letters;5/17/1999, Vol. 74 Issue 20, p2939 

    Examines thin films of quantum size zinc oxide particles fabricated by electrophoretic deposition from stable colloidal suspensions. Average particle size; Optical properties; Band-to-band and visible photoluminescence.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics