Stimulated emission in ultrathin (20 Ã…) AlxGa1-xAs-GaAs single quantum well heterostructures

Lo, Y. C.; Hsieh, K. Y.; Kolbas, R. M.
May 1988
Applied Physics Letters;5/30/1988, Vol. 52 Issue 22, p1853
Academic Journal
Spontaneous and stimulated emission spectra from a series of AlxGa1-xAs-GaAs single quantum well heterostructures are demonstrated for well widths as thin as 20 Å. These undoped samples, grown by molecular beam epitaxy, are the thinnest single quantum wells ever reported to support stimulated emission. Laser thresholds are generally quite low (1.2 kW/cm2) despite the fact that the single well is undoped and of dimensions which were previously thought to be too small to effectively collect excess carriers (Lz«scattering path length). A simple model based on the spatial extent of the wave function, rather than the well width, is proposed to explain the experimental results.


Related Articles

  • GaAs/AlGaAs distributed feedback structure with multiquantum well for surface-emitting laser. Nomura, Y.; Shinozaki, K.; Asakawa, K.; Ishii, M. // Journal of Applied Physics;8/1/1986, Vol. 60 Issue 3, p874 

    Demonstrates laser emission by photopumping at room temperature from a distributed feedback (DFB) structure for a surface-emitting laser constructed by alternating growths of gallium arsenide and aluminum gallium arsenide multiquantum well. Preparation of the DFB structure; Measurement of the...

  • Emission spectra of single quantum well lasers with inhomogeneous current injection. Tokuda, Yasunori; Abe, Yuji; Matsui, Teruhito; Kanamoto, Kyozo; Tsukada, Noriaki; Nakayama, Takashi // Journal of Applied Physics;8/1/1988, Vol. 64 Issue 3, p1022 

    Presents a study that investigated emission spectra of a tandem-type gallium arsenide single quantum well laser diode under pulsed operating conditions. Description of the device structure; Results and discussion; Conclusions.

  • Optical characterization of two-dimensional charge density in GaAs-(Al0.3Ga0.7As) multiple quantum wells. Liu, D. W.; Brody, E. M.; Chi, J. // Journal of Applied Physics;1/15/1989, Vol. 65 Issue 2, p726 

    Presents a study which investigated the optical characterization of two-dimensional charge density in gallium arsenide (GaAs)-(Al[sub0.3]Ga[sub0.7]As) multiple quantum wells (MQW). Measurements and optical techniques used to characterize two-dimensional electron gas in the GaAs wells;...

  • Fine structure of the alloy-broadened thermal emission spectra from DX centers in GaAlAs. Calleja, E.; Gomez, A.; Muñoz, E.; Cámara, P. // Applied Physics Letters;5/30/1988, Vol. 52 Issue 22, p1877 

    Deep level transient spectroscopy in Si- and Sn-doped GaAlAs reveals a fine structure of the DX center thermal emission spectra under adequate filling pulse and sampling window times. This structure is reproducible in samples with Al mode fractions near 30% but it is not detectable in samples...

  • Native-oxide stripe-geometry Al[sub x]Ga[sub 1-x]As-GaAs quantum well heterostructure lasers. Dallesasse, J.M.; Holonyak Jr., N. // Applied Physics Letters;1/28/1991, Vol. 58 Issue 4, p394 

    Presents data on the room-temperature continuous operation of native-oxide single-stripe Al[sub x]Ga[sub 1-x]As-GaAs quantum well heterostructure (QWH) lasers. Production of the device quality native oxide by the conversion of high aluminum composition Al[sub x]Ga[sub 1-x]As confining layers...

  • High quality In[sub 0.2]Ga[sub 0.8]As/Al[sub x]Ga[sub 1-x]As (x=0-0.32) strained single quantum.... Hayakawa, Toshiro; Horie, Hideyoshi; Nagai, Masaharu; Niwata, Yoshihisa // Applied Physics Letters;1/11/1993, Vol. 62 Issue 2, p190 

    Examines the effect of aluminum composition on photoluminescence (PL) in the In[sub 0.2]Ga[sub 0.8]As/Al[sub x]Ga[sub 1-x]As single strained quantum wells. Growth of the samples by molecular beam epitaxy; Basis for explaining the increased PL linewidth; Improvement in device performance.

  • Optically controlled GaAs/AlAs multiple quantum well modulators employing integrated dielectric reflectors. Kowalsky, W.; Hackbarth, Th.; Ebeling, K. J. // Applied Physics Letters;6/6/1988, Vol. 52 Issue 23, p1933 

    We investigate all-optical switching in GaAs/AlAs multiple quantum well devices with integrated dielectric reflector. A 7 mW control beam at λc=790 nm wavelength produces a 15% reflection change for a test beam at λt=858 nm which is close to the lowest energy transition in the quantum...

  • Emission wavelength of AlGaAs-GaAs multiple quantum well lasers. Blood, P.; Fletcher, E. D.; Hulyer, P. J.; Smowton, P. M. // Applied Physics Letters;4/28/1986, Vol. 48 Issue 17, p1111 

    We have recorded spontaneous emission spectra from multiple quantum well lasers grown by molecular beam epitaxy with 25-Ã…-wide GaAs wells by opening a window in the top contact stripe. These spectra have a low-energy tail and consequently the gain spectra derived from them show that laser...

  • Photoinduced transient spectroscopy of deep levels in GaAs/Ga1-xAlxAs multiple quantum wells. Arikan, M.C.; Cenk, S.; Balkan, N. // Journal of Applied Physics;11/15/1997, Vol. 82 Issue 10, p4986 

    Investigates the capture and emission dynamics of deep levels in GaAs/ga1-xAlxAs multiple quantum well structures by using the photoinduced transient spectroscopy (PITS) technique. Comparison of the study with the observations based on other conventional techniques; Application of the PITS...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics