Photon-controlled fabrication of amorphous superlattice structures using ArF (193 nm) excimer laser photolysis

Lowndes, D. H.; Geohegan, D. B.; Eres, D.; Pennycook, S. J.; Mashburn, D. N.; Jellison, G. E.
May 1988
Applied Physics Letters;5/30/1988, Vol. 52 Issue 22, p1868
Academic Journal
Pulsed ArF (193 nm) excimer laser photolysis of disilane, germane, and disilane-ammonia mixtures has been used to deposit amorphous superlattices containing silicon, germanium, and silicon nitride layers. Transmission electron microscope cross-section views demonstrate that structures having thin (5–25 nm) layers and sharp interlayer boundaries can be deposited at substrate temperatures below the pyrolytic threshold, entirely under laser photolytic control.


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