AlGaAs doping superlattices grown by molecular beam epitaxy

Ackley, D. E.; Lee, H.; Nouri, N.; Colvard, C.
May 1988
Applied Physics Letters;5/30/1988, Vol. 52 Issue 22, p1883
Academic Journal
AlGaAs doping superlattices (‘‘nipi structures’’) have been successfully grown in 30% AlGaAs by molecular beam epitaxy. Tunable photoluminescence (PL) as a function of incident laser intensity has been observed in samples with a wide range of intrinsic layer thicknesses over a temperature range from 2 to 120 K. Luminescence shifts as large as 230 meV were observed for a range of incident intensities of about 500. Low-temperature PL spectra showed a weaker dependence of the peak energy on incident intensity for thicker spacer layers. This decrease in tuning rate can be associated with the reduced probability for tunneling transitions with increasing spacer thickness.


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