Molecular beam epitaxial GaAs optical detectors on silica fibers

Li, Wei-Qi; Chin, Albert; Bhattacharya, Pallab; DiVita, S.
May 1988
Applied Physics Letters;5/23/1988, Vol. 52 Issue 21, p1768
Academic Journal
By using molecular beam epitaxy and post-growth annealing techniques, we have successfully made GaAs interdigitated photoconductive detectors on D-shaped silica fibers. The detectors exhibit low leakage current and internal photoconductive gains of up to 15 are measured. To our knowledge this is the first realization of active III-V optoelectronic devices on fibers and opens up the possibility of realizing optoelectronic integration and circuits directly on fibers.


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