Time-resolved x-ray study of Ge during pulsed laser melting

Tischler, J. Z.; Larson, B. C.; Mills, D. M.
May 1988
Applied Physics Letters;5/23/1988, Vol. 52 Issue 21, p1785
Academic Journal
Nanosecond resolution time-resolved x-ray diffraction has been used to make the first measurements of the liquid-solid interface overheating and undercooling in germanium. The results show an orientation-dependent undercooling for growth on (111) and (001) faces. For both the (111) and (001) faces the velocity versus temperature interface response function has a slope of ∼5 K/(m/s), except for undercooling on the (111) face where the slope is 20 K/(m/s).


Related Articles

  • Imaging plate for time-resolved x-ray measurements (invited). Amemiya, Yoshiyuki; Kishimoto, Shunji; Matsushita, Tadashi; Satow, Yoshinori; Ando, Masami // Review of Scientific Instruments;Jul1989, Vol. 60 Issue 7, p1552 

    Two apparatus have been developed for time-resolved measurements Of x-ray diffraction patterns using an imaging plate detector. The first one is based on a cinema method which permits up to 40 exposures of a two-dimensional x-ray pattern ( 100 × 108 mm²) with a 0.3-s time resolution. The...

  • Vertical correlation of SiGe islands in SiGe/Si superlattices: X-ray diffraction versus transmission electron microscopy. Stangl, J.; Roch, T.; Bauer, G.; Bauer, G; Kegel, I.; Metzger, T. H.; Metzger, T.H.; Schmidt, O. G.; Schmidt, O.G.; Eberl, K.; Ernst, F.; Kienzle, O. // Applied Physics Letters;12/11/2000, Vol. 77 Issue 24 

    We have investigated the vertical correlation properties of SiGe islands in a series of Si/SiGe multilayers using grazing incidence x-ray diffraction. The degree of island correlation is found to strongly depend on the thickness of the Si spacer layer separating subsequent SiGe layers. A...

  • Charge emission from silicon and germanium surfaces irradiated with KrF excimer laser pulses. Bialkowski, M. M.; Hurst, G. S.; Parks, J. E.; Lowndes, D. H.; Jellison, G. E. // Journal of Applied Physics;11/1/1990, Vol. 68 Issue 9, p4795 

    Presents a study that reported time-resolved measurements of the emission of positive and negative charge from silicon and germanium surfaces irradiated with krypton-fluorine excimer laser pulses. Time evolution of the emission currents; Positive ion emission signal from germanium; Duration of...

  • X-ray in situ observation of relaxation and diffusion processes in Si1-xGex layers on silicon substrates. Zaumseil, P.; Jagdhold, U.; Krüger, D. // Journal of Applied Physics;8/15/1994, Vol. 76 Issue 4, p2191 

    Discusses a study which presented a method to simultaneously investigate in situ the relaxation and diffusion behavior of Si[sub1-x]Ge[subx] layers on silicon substrates using a conventional X-ray powder diffractometer with a high-temperature attachment. Benefits from the use of the method;...

  • Characterization of Si1-xGex/Si layers and depth profile of their heterobipolar transistor structures by high-resolution x-ray diffractometry and computer simulations. Bhagavannarayana, G.; Halder, S. K. // Journal of Applied Physics;1/15/2005, Vol. 97 Issue 2, p024509 

    Using high-resolution x-ray diffractometry (HRXRD) and computer simulations, germanium content x, thickness T of pseudomorphic Si1-xGex layers, and Ge depth profile in their advanced heterobipolar transistor (HBT) structures grown on (001)Si substrates have been determined. High-resolution...

  • Direct band gap optical emission from Ge islands grown on relaxed Si0.5Ge0.5/Si (100) substrate. Aluguri, R.; Manna, S.; Ray, S. K. // Journal of Applied Physics;2014, Vol. 115 Issue 1, p1 

    Strained Ge islands have been grown on fully relaxed Si0.5Ge0.5 substrate by pulsed laser ablation technique. The formation of strained Ge islands has been found for film with higher thickness following Stranski-Krastanov growth mechanism. The variation of strain with changing Ge layer thickness...

  • Femtosecond time-resolved investigation of the vibrational modes of vitreous GeO2. Burgin, J.; Guillon, C.; Langot, P.; Vallée, F.; Hehlen, B. // Applied Physics Letters;12/18/2006, Vol. 89 Issue 25, p251913 

    The vibrational response of vitreous GeO2 is investigated using an impulsive stimulated Raman scattering technique in the femtosecond regime. The results yield evidence for a weak vibrational mode ascribed to oxygen motion in three-membered planar ring structures. Its frequency and damping are...

  • The structure and crystallization characteristics of phase change optical disk material Ge1Sb2Te4. Mao, Z. L.; Chen, H.; Jung, Ai-lien // Journal of Applied Physics;8/15/1995, Vol. 78 Issue 4, p2338 

    Investigates the crystallization characteristics of amorphous germanium-antimony-tellurium thin films by means of time-resolved transition measurements. Use of x-ray diffraction and transmission electron microscopy; System for measurements of transition and reflection during heating; X-ray...

  • Time-resolved electroluminescence of bulk Ge at room temperature. Terada, Yosuke; Yasutake, Yuhsuke; Fukatsu, Susumu // Applied Physics Letters;1/28/2013, Vol. 102 Issue 4, p041102 

    Time-resolved spectroscopy of bulk Ge at room temperature allows to differentiate direct-gap electroluminescence (EL) from indirect-gap EL. The results indicate that there exists strong coupling between the eight-fold indirect L-valleys and the zone-center Γ-valley due to intervalley phonon...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics