Influence of Si film thickness on growth enhancement in Si lateral solid phase epitaxy

Moniwa, Masahiro; Kusukawa, Kikuo; Murakami, Eiichi; Warabisako, Terunori; Miyao, Masanobu
May 1988
Applied Physics Letters;5/23/1988, Vol. 52 Issue 21, p1788
Academic Journal
Lateral solid phase epitaxial growth (L-SPE) of Si on SiO2 film was investigated as a function of deposited amorphous Si (a-Si) film thickness. Both the L-SPE rate and the annealing time necessary for {111} facet formation increased with film thickness. As a result, a large L-SPE length (9 μm) under {110} facet growth was obtained for a 1.6-μm-thick film sample. Above the critical film thickness (>2 μm), crack formation in a-Si films was observed during deposition. This indicates that intrinsic stresses play an important role in this growth enhancement.


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