Influence of Si film thickness on growth enhancement in Si lateral solid phase epitaxy

Moniwa, Masahiro; Kusukawa, Kikuo; Murakami, Eiichi; Warabisako, Terunori; Miyao, Masanobu
May 1988
Applied Physics Letters;5/23/1988, Vol. 52 Issue 21, p1788
Academic Journal
Lateral solid phase epitaxial growth (L-SPE) of Si on SiO2 film was investigated as a function of deposited amorphous Si (a-Si) film thickness. Both the L-SPE rate and the annealing time necessary for {111} facet formation increased with film thickness. As a result, a large L-SPE length (9 μm) under {110} facet growth was obtained for a 1.6-μm-thick film sample. Above the critical film thickness (>2 μm), crack formation in a-Si films was observed during deposition. This indicates that intrinsic stresses play an important role in this growth enhancement.


Related Articles

  • Epitaxial crystallization of amorphous SiO[sub 2] films deposited on single-crystalline... Roccaforte, F.; Dhar, S.; Lieb, K.P.; Harbsmeier, F. // Applied Physics Letters;11/8/1999, Vol. 75 Issue 19, p2903 

    Reports on the solid-phase epitaxial growth of thin amorphous silicon oxide films deposited by electron gun evaporation in single-crystalline alpha-quartz substrates achieved by high-dose Cs(supra +)-ion implantation. Thin amorphous layer produced by silicon-ion implantation on alpha-quartz...

  • Epitaxial growth induced by phosphorus tribromide doping of polycrystalline silicon films on silicon. Knoell, R. V.; Murarka, S. P. // Journal of Applied Physics;2/15/1985, Vol. 57 Issue 4, p1322 

    Presents a study that observed phosphorus tribromide-doping induced epitaxial growth in polycrystalline silicon films deposited on silicon substrates and on silicon in windows etched in an oxide. Use of cross-sectional transmission electron microscopy to examine granular structure of the film;...

  • Evaluation of interface potential barrier heights between ultrathin silicon oxides and silicon. Horiguchi, Seiji; Yoshino, Hideo // Journal of Applied Physics;8/15/1985, Vol. 58 Issue 4, p1597 

    Evaluates the interface potential barrier heights for ultrathin silicon oxides on silicon and effective electron masses in some of the oxides. Sample preparation; Derivation of charging characteristics.

  • Current transport properties of SiO2 films containing Ge nanocrystals. Fujii, Minoru; Mamezaki, Osamu; Hayashi, Shinji; Yamamoto, Keiichi // Journal of Applied Physics;2/1/1998, Vol. 83 Issue 3, p1507 

    Presents information pertaining to the electrical transport properties associated with silicon oxide (SiO2) films. What these films contains; Explanation of the observed electrical properties; Preparation of germanium (Ge) nonostructures.

  • Dynamic behavior of negative charge trapping in thin silicon oxide. Haddad, Sameer; Cagnina, Sal // Applied Physics Letters;10/23/1989, Vol. 55 Issue 17, p1747 

    The trapping of negative charges in thin oxide under bipolar and unipolar dynamic stressing is compared. Bipolar stressing causes significantly less trapping than unipolar stressing. The difference is attributed to the enhanced electron detrapping during the bipolar stress. This detrapping...

  • Comparison of excimer laser recrystallized prepatterned and unpatterned silicon films on SiO2. Giust, G.K.; Sigmon, T.W. // Journal of Applied Physics;2/1/1997, Vol. 81 Issue 3, p1204 

    Compares the laser recrystallization of unpatterned and prepatterned silicon films on silicon oxide. Recrystallized grain microstructures; Recrystallization mechanisms; Creation and identification of three well defined zones in the prepatterned films.

  • New leakage mechanism in sub-5-nm oxynitride dielectrics. Tue Nguyen; Carl, Daniel A. // Applied Physics Letters;10/4/1993, Vol. 63 Issue 14, p1972 

    Examines leakage mechanism in thin (3.5-6.5 nanometer/nm) oxynitride dielectrics prepared by rapid thermal annealing of silicon oxide films. Context of the theory for electronic conduction in 15 nm oxynitride films; Characteristics of oxynitride films; Details on the probability of tunneling...

  • Density of ultradry ultrathin silicon oxide films and its correlation with reliability. Yamada, Hiroshi // Journal of Applied Physics;11/15/1997, Vol. 82 Issue 10, p4916 

    Analyzes the correlation of ultradry ultrathin amorphous silicon oxide gate films with reliability. Determination of the oxidation process by charged-particle activation analysis; Relationship between reliability and density; Sample preparation for density and time-dependent dielectric...

  • Thickness profiles of SiO[sub 2] films deposited from tetraethoxysilane/O[sub 3] precursors in.... Soave, R.J.; Ganguli, S. // Applied Physics Letters;11/27/1995, Vol. 67 Issue 22, p3286 

    Measures the thickness profiles of silicon oxide films deposited by ozone-augmented tetraethoxysilane in ultra-high-aspect ratio capillaries. Exhibition of sharp drop in film thickness; Development of a feature-scale model for the process; Inhibition of the film-forming reaction by a trapped...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics