New accurate exploitation of thermally stimulated ionic current curves for alkali contaminated metal-oxide-silicon structures

Choquet, C.; Balland, B.
May 1988
Applied Physics Letters;5/23/1988, Vol. 52 Issue 21, p1791
Academic Journal
Hazardous contamination may appear at different steps of metal-oxide-silicon (MOS) process. It is thus important to identify the ionic species and to evaluate their concentrations. This is often studied by the means of thermally stimulated ionic current (TSIC). But up to now TSIC curve interpretations use more or less justified approximations. A new numerical technique of TSIC curves exploitation is reported. Our method is accurate because it is not based on approximations; moreover, this one is well adapted to computer processing. We present results on K+ contaminated MOS structures. Our results are compared with those obtained by other methods.


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