Metal contacts to GaAs with 1 eV Schottky barrier height

Waldrop, J. R.; Grant, R. W.
May 1988
Applied Physics Letters;5/23/1988, Vol. 52 Issue 21, p1794
Academic Journal
Metal Schottky barrier contacts to n-type (100) GaAs are described in which a 1 eV Schottky barrier height [lowercase_phi_synonym]B is achieved by using a very thin Si interface layer to influence the interface Fermi energy EiF. The metals investigated are Au, Cr, and Ti. The contact structure consists of a thick metal in combination with a ∼15–30 Å heavily p-type Si interface layer. The EiF and interface composition during initial contact formation were obtained by x-ray photoemission spectroscopy (XPS); the [lowercase_phi_synonym]B for the corresponding thick contacts was measured by current-voltage (I-V) and capacitance-voltage (C-V) techniques. The XPS, I-V, and C-V measurements gave consistent results. The 1 eV [lowercase_phi_synonym]B for the Si interface layer contact structure is independent of the contact metal.


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