Thermal stressing of bipolar transistors with metal-insulator-semiconductor heterojunction emitters

Szeto, N.; Pulfrey, D. L.; Tarr, N. G.
May 1988
Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1664
Academic Journal
Silicon bipolar junction transistors employing metal-thin insulator-semiconductor tunnel junction emitters are capable of realizing extremely high common-emitter current gains. The experimental evidence presented here indicates a possible limitation of these devices as regards their inability to withstand moderate temperature stressing.


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